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参数资料
| 型号： | 2SB1091 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 8 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 6/9页 |
| 文件大小： | 169K |
| 代理商： | 2SB1091 |
2SB1091
2
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
–60
—
V
I
C = –25 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–7
—
V
I
E = –50 mA, IC = 0
Collector cutoff current
I
CBO
—
–100
AV
CB = –60 V, IE = 0
I
CEO
—
–10
AV
CE = –50 V, RBE = ∞
DC current transfer ratio
h
FE
1000
—
20000
V
CE = –3 V, IC = –4 A*
1
Collector to emitter saturation
V
CE(sat)1
—
–1.5
V
I
C = –4 A, IB = –8 mA*
1
voltage
V
CE(sat)2
—
–3.0
V
I
C = –8 A, IB = –80 mA*
1
Base to emitter saturation
V
BE(sat)1
—
–2.0
V
I
C = –4 A, IB = –8 mA*
1
voltage
V
BE(sat)2
—
–3.5
V
I
C = –8 A, IB = –80 mA*
1
Turn on time
t
on
—
1.0
—
sI
C = –4 A, IB1 = –IB2 = –8 mA
Storage time
t
stg
—
2.5
—
s
Fall time
t
f
—
0.5
—
s
Note:
1. Pulse Test.
0
50
100
150
Case Temperature TC (°C)
Collector
power
dissipation
Pc
(W)
20
60
40
Maximum Collector Dissipation Curve
–0.02
–0.05
–0.1
–0.2
–0.5
–1.0
–2
–5
–10
–20
Collector to emitter Voltage VCE (V)
Collector
Current
I
C
(A)
–1
–2
–5
–10
–20
–50 –100
Area of Safe Operation
iC (peak)
IC (max)
1
s
Ta = 25
°C
1 Shot pulse
PW
=
10
ms
1 ms
100
s
DC
Operation
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相关代理商/技术参数 |
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|---|---|
| 2SB1093 | 制造商:NEC 制造商全称:NEC 功能描述:PNP SILICON DARLINGTON TRANSISTOR |
| 2SB-1093-AZ-L | 制造商:Renesas Electronics 功能描述:PNP 制造商:Renesas Electronics 功能描述:PNP Bulk |
| 2SB1093-AZ-M | 制造商:Renesas Electronics 功能描述:Bulk |
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| 2SB1094K | 制造商:NEC 制造商全称:NEC 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | SOT-186 |
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