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参数资料
| 型号： | 2SB1219S |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, SMINI3-G1, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 507K |
| 代理商： | 2SB1219S |
Transistors
Publication date : October 2008
SJC00072DED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1219
Silicon PNP epitaxial planar type
For general amplication
Complementary to 2SD1820
Features
Large collector current IC
S-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
–30
V
Collector-emitter voltage (Base open)
VCEO
–25
V
Emitter-base voltage (Collector open)
VEBO
–5
V
Collector current
IC
–500
mA
Peak collector current
ICP
–1
A
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°
C
Storage temperature
Tstg
–55 to +150
°
C
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = –10 mA, IE = 0
–30
V
Collector-emitter voltage (Base open)
VCEO
IC = –2 mA, IB = 0
–25
V
Emitter-base voltage (Collector open)
VEBO
IE = –10 mA, IC = 0
–5
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = –20 V, IE = 0
– 0.1
m
A
Forward current transfer ratio *1
hFE1 *2 VCE = –10 V, IC = –150 mA
85
340
hFE2
VCE = –10 V, IC = –500 mA
40
Collector-emitter saturation voltage *1
VCE(sat) IC = –300 mA, IB = –30 mA
– 0.35
– 0.60
V
Base-emitter saturation voltage *1
VBE(sat) IC = –300 mA, IB = –30 mA
–1.1
–1.5
V
Transition frequency
fT
VCB = –10 V, IE = 50 mA, f = 200 MHz
200
MHz
Collector output capacitance
(Common base, input open circuited)
Cob
VCB = –10 V, IE = 0, f = 1 MHz
6
15
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classication
Rank
Q
R
S
No-rank
hFE1
85 to 170
120 to 240
170 to 340
85 to 340
Marking symbol
CQ
CR
CS
C
Product of no-rank is not classied and have no marking symbol for rank.
Package
Code
SMini3-G1
Pin Name
1. Base
2. Emitter
3. Collector
Marking Symbol: C
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
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| 2SB1220 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB12200RL | 功能描述:TRANS PNP 150VCEO 50MA SMINI-3 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SB1220GRL | 功能描述:TRANS PNP 150VCEO 50MA SMINI-3 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SB12210QA | 功能描述:TRANS PNP 200VCEO 70MA TO-92NL RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SB1221-Q | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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