- 您现在的位置：买卖IC网 > PDF目录55786 > 2SB1252P (PANASONIC CORP) 5 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB PDF资料下载
参数资料
| 型号： | 2SB1252P |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 5 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220F-A1, SC-67, FULL PACK-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 251K |
| 代理商： | 2SB1252P |
Power Transistors
1
Publication date: February 2003
SJD00062BED
2SB1252
Silicon PNP epitaxial planar type darlington
For power amplification
■ Features
Optimum for 35 W Hi-Fi output
High forward current transfer ratio h
FE
Low collector-emitter saturation voltage V
CE(sat)
Full-pack package which can be installed to the heat sink with one screw.
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC =
30 mA, I
B = 0
100
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 120 V, IE = 0
100
A
Collector-emitter cutoff current (Base open)
ICEO
VCE = 100 V, IB = 0
100
A
Emitter-base cutoff current (Collector open)
IEBO
VEB
= 5 V, I
C
= 0
100
A
Forward current transfer ratio
hFE1
VCE = 5 V, IC = 1 A
2 000
hFE2 *
VCE = 5 V, IC = 4 A
5 000
30 000
Collector-emitter saturation voltage
VCE(sat)
IC
= 4 A, I
B
= 4 mA
2.5
V
Base-emitter saturation voltage
VBE(sat)
IC = 4 A, IB = 4 mA
3.0
V
Transition frequency
fT
VCE = 10 V, IC = 0.5 A, f = 1 MHz
20
MHz
Turn-on time
ton
IC
= 4 A, I
B1
= 4 mA, I
B2
= 4 mA
1.0
s
Storage time
tstg
VCC = 50 V
0.8
s
Fall time
tf
1.0
s
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
120
V
Collector-emitter voltage (Base open)
VCEO
100
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
5A
Peak collector current
ICP
8A
Collector power
PC
45
W
dissipation
Ta = 25°C2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE2
5 000 to 15 000 8 000 to 30 000
10.0±0.2
5.5±0.2
7.5
±
0.2
16.7
±
0.3
0.7
±
0.1
14.0
±
0.5
Solder
Dip
(4.0)
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.3
5.08±0.5
2
13
2.7±0.2
4.2±0.2
4.2
±
0.2
φ 3.1±0.1
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Internal Connection
B
C
E
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相关PDF资料 |
PDF描述 |
|---|---|
| 2SB1260 | 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1282 | 4 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 2SB1310A | 2 A, PNP, Si, POWER TRANSISTOR, TO-126F |
| 2SB1319R | 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1320AS | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1257 | 制造商:Sanken Electric Co Ltd 功能描述:PNP Bulk 制造商:Sanken Electric Co Ltd 功能描述:TRANS PNP DARL 60V 4A TO220F 制造商:Distributed By MCM 功能描述:SUB ONLY SANKEN TRANSISTOR FM20-60V -4A 25W BCE |
| 2SB1258 | 制造商:Sanken Electric Co Ltd 功能描述:Trans Darlington PNP 100V 6A 3-Pin (3+Tab) TO-220F 制造商:Sanken Electric Co Ltd 功能描述:Trans Darlington PNP 100V 6A 3-Pin (3+Tab) TO-220F Bulk 制造商:Sanken Electric Co Ltd 功能描述:Trans Darlington PNP 100V 6A 3-Pin (3+Tab) TO-220F Box 制造商:Sanken Electric Co Ltd 功能描述:TRANS PNP DARL 100V 6A TO220F |
| 2SB1259 | 制造商:Sanken Electric Co Ltd 功能描述:Trans Darlington PNP 120V 10A 3-Pin (3+Tab) TO-220F Bulk 制造商:Sanken Electric Co Ltd 功能描述:TRANS PNP DARL 120V 10A TO220F 制造商:Allegro MicroSystems 功能描述:Trans Darlington PNP 120V 10A 3-Pin(3+Tab) TO-220F |
| 2SB1260FRAT100R | 制造商:ROHM Semiconductor 功能描述: |
| 2SB1260T100 | 制造商:Rohm 功能描述:PNP Cut Tape |
发布紧急采购，3分钟左右您将得到回复。