参数资料
型号: 2SB1252P
厂商: PANASONIC CORP
元件分类: 功率晶体管
英文描述: 5 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB
封装: ROHS COMPLIANT, TO-220F-A1, SC-67, FULL PACK-3
文件页数: 2/4页
文件大小: 251K
代理商: 2SB1252P
2SB1252
2
SJD00062BED
VBE(sat) IC
hFE IC
Cob VCB
PC Ta
IC VCE
VCE(sat) IC
ton, tstg, tf IC
Safe operation area
0
160
40
120
80
0
60
50
40
30
20
10
Collector
power
dissipation
P
C
(W)
Ambient temperature T
a (°C)
(1)TC=Ta
(2)With a 100
×100×2mm
Al heat sink
(3)With a 50
×50×2mm
Al heat sink
(4)Without heat sink
(PC=2W)
(1)
(2)
(3)
(4)
0
12
2
10
4
8
6
5
4
3
2
1
Collector
current
I
C
(A)
Collector-emitter voltage V
CE (V)
TC=25C
–0.1mA
–0.2mA
–0.3mA
–0.4mA
IB=–0.5mA
0.1
100
10
1
0.1
1
10
100
Collector-emitter
saturation
voltage
V
CE(sat)
(V)
Collector current I
C (A)
IC/IB=1000
25C
–25C
TC=100C
0.1
1
10
100
10
1
100
Base-emitter
saturation
voltage
V
BE(sat)
(V)
Collector current I
C (A)
IC/IB=1000
TC=–25C
25C
100C
0.01
0.1
1
10
102
103
104
105
Forward
current
transfer
ratio
h
FE
Collector current I
C (A)
VCE=5V
TC=100C
25C
–25C
1
10
100
1
1 000
100
10
Collector
output
capacitance
(Common
base,
input
open
circuited)
C
ob
(pF)
Collector-base voltage V
CB (V)
IE=0
f=1MHz
TC=25C
0
8
2
6
4
0.01
0.1
1
10
100
tstg
ton
tf
Pulsed tw=1ms
Duty cycle=1%
IC/IB=1000
(–IB1=IB2)
VCC=–50V
TC=25C
Turn-on
time
t
on
,
Storage
time
t
stg
,
Fall
time
t
f
(
s)
Collector current I
C (A)
0.01
1
0.1
1
10
100
10
100
1000
Collector
current
I
C
(A)
Collector-emitter voltage V
CE (V)
t=1ms
ICP
IC
t=10ms
Non repetitive pulse
TC=25C
DC
This product complies with the RoHS Directive (EU 2002/95/EC).
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