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参数资料
| 型号： | 2SB1319R |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | M-A1, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 198K |
| 代理商： | 2SB1319R |
Transistors
1
Publication date: November 2002
SJC00077BED
2SB1319
Silicon PNP epitaxial planar type
For low-frequency power amplification
■ Features
Low collector-emitter saturation voltage V
CE(sat)
Large collector current I
C
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
30
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
7V
Collector current
IC
5A
Peak collector current
ICP
10
A
Collector power dissipation *
PC
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
■ Electrical Characteristics T
a = 25°C ± 3°C
Rank
P
Q
R
hFE
90 to 135
120 to 205
180 to 625
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 1 mA, IB = 0
20
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 0
7V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 10 V, I
E
= 0
100
nA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 5 V, IC = 0
1
A
Forward current transfer ratio *
1, 2
hFE
VCE = 2 V, IC = 2 A
90
625
Collector-emitter saturation voltage *
1
VCE(sat)
IC
= 3 A, I
B
= 0.1 A
1V
Transition frequency
fT
VCB = 6 V, IE = 50 mA, f = 200 MHz
120
MHz
Collector output capacitance
Cob
VCB = 20 V, IE = 0, f = 1 MHz
85
pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Unit: mm
1: Base
2: Collector
3: Emitter
M-A1 Package
6.9±0.1
2.5±0.1
(1.0)
(1.5)
(0.85)
0.45±0.05
0.55±0.1
(2.5)
21
3
R 0.7
R 0.9
(0.4)
3.5
±
0.1
4.5
±
0.1
4.1
±
0.2
2.4
±
0.2
1.25
±
0.05
2.0
±
0.2
1.0
±
0.1
(1.5)
Note) *: Print circuit board: Copper foil area of 1 cm2 or more, and the board
thickness of 1.7 mm for the collector portion
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
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| 2SB1320AQRTA | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1321A | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1321A0A | 功能描述:TRANS PNP LF AMP 50VCEO MT-1 RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SB1321AR | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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