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参数资料
| 型号： | 2SB1320AS |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, MT-1-A1, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 257K |
| 代理商： | 2SB1320AS |
Transistors
1
Publication date: March 2003
SJC00078BED
2SB1320A
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD1991A
■ Features
High forward current transfer ratio h
FE
Allowing supply with the radial taping
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
60
V
Collector-emitter voltage (Base open)
VCEO
50
V
Emitter-base voltage (Collector open)
VEBO
7V
Collector current
IC
100
mA
Peak collector current
ICP
200
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 10 A, IE = 0
60
V
Collector-emitter voltage (Base open)
VCEO
IC
= 2 mA, I
B
= 0
50
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 0
7V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 20 V, IE = 0
1
A
Collector-emitter cutoff current (Base open)
ICEO
VCE
= 20 V, I
B
= 0
1
A
Forward current transfer ratio *
hFE
VCE = 10 V, IC = 2 mA
160
460
Collector-emitter saturation voltage
VCE(sat)
IC = 100 mA, IB = 10 mA
1V
Transition frequency
fT
VCB
= 10 V, I
E
= 1 mA, f = 200 MHz
80
MHz
Collector output capacitance
Cob
VCB
= 10 V, I
E
= 0, f = 1 MHz
3.5
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
No-rank
hFE
160 to 260
210 to 340
290 to 460
160 to 460
Product of no-rank is not classified and have no marking symbol for rank.
6.9±0.1
2.5±0.1
0.45
1.05±0.05
2.5±0.5
123
2.5±0.5
+0.10
–0.05
0.45
+0.10
–0.05
(0.8)
(1.0)
(0.85)
3.5
±
0.1
14.5
±
0.5
(0.7)
(4.0)
0.65 max.
Unit: mm
1: Emitter
2: Collector
3: Base
MT-1-A1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
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| 2SB1321A | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1321A0A | 功能描述:TRANS PNP LF AMP 50VCEO MT-1 RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SB1321AR | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1321TA | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1322 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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