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参数资料
| 型号： | 2SB1393P |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封装： | TO-220, FULL PACK-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 165K |
| 代理商： | 2SB1393P |
1
Power Transistors
2SB1393, 2SB1393A
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD1985 and 2SD1985A
s Features
q
Satisfactory linearity of foward current transfer ratio hFE
q
Low collector to emitter saturation voltage VCE(sat)
q
Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–60
–80
–60
–80
–5
–3
25
2.0
150
–55 to +150
Unit
V
A
W
C
2SB1393
2SB1393A
2SB1393
2SB1393A
TC=25°C
Ta=25
°C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICEO
ICES
IEBO
VCEO
hFE1
*
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
Conditions
VCE = –30V, IB = 0
VCE = –60V, IB = 0
VCE = –60V, VBE = 0
VCE = –80V, VBE = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
VCE = –4V, IC = –1A
VCE = –4V, IC = –3A
IC = –3A, IB = – 0.375A
VCE = –5V, IC = – 0.1A, f = 1MHz
IC = –1A, IB1 = – 0.1A, IB2 = 0.1A,
VCC = –50V
min
–60
–80
70
10
typ
20
0.5
1.2
0.3
max
–300
–200
–1
250
–1.8
–1.2
Unit
A
mA
V
MHz
s
2SB1393
2SB1393A
2SB1393
2SB1393A
2SB1393
2SB1393A
*h
FE1 Rank classification
Rank
Q
P
hFE1
70 to 150
120 to 250
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0
±0.2
5.5
±0.2
7.5
±0.2
16.7
±0.3
0.7
±0.1
14.0
±0.5
Solder
Dip
4.0
0.5
+0.2
–0.1
1.4
±0.1
1.3
±0.2
0.8
±0.1
2.54
±0.25
5.08
±0.5
2
13
2.7
±0.2
4.2
±0.2
4.2
±0.2
φ3.1±0.1
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1396S-TD-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP 10V 3A SOT89 |
| 2SB1398 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB13980PA | 功能描述:TRANS PNP LF AMP 25VCEO MT-2 RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SB13980QA | 功能描述:TRANS PNP LF AMP 25VCEO MT-2 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SB1398QTA | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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