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参数资料
| 型号： | 2SB1156PQ |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 20 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封装： | TOP3F-A, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 67K |
| 代理商： | 2SB1156PQ |
Power Transistors
1
2SB1156
Silicon PNP epitaxial planar type
For power switching
Complementary to 2SD1707
I Features
Low collector to emitter saturation voltage V
CE(sat)
Satisfactory linearity of forward current transfer ratio h
FE
Large collector current I
C
Full-pack package which can be installed to the heat sink with one
screw
I Absolute Maximum Ratings T
C= 25°C
Unit: mm
I Electrical Characteristics T
C = 25°C
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
130
V
Collector to emitter voltage
VCEO
80
V
Emitter to base voltage
VEBO
7V
Peak collector current
ICP
30
A
Collector current
IC
20
A
Collector power
TC = 25
°CP
C
100
W
dissipation
Ta = 25
°C3
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = 100 V, IE = 0
10
A
Emitter cutoff current
IEBO
VEB =
5 V, I
C = 0
50
A
Collector to emitter voltage
VCEO
IC =
10 mA, I
B = 0
80
V
Forward current transfer ratio
hFE1
VCE = 2 V, IC = 0.1 A
45
hFE2 *
VCE =
2 V, I
C =
3 A
90
260
hFE3
VCE =
2 V, I
C =
10 A
30
Collector to emitter saturation voltage
VCE(sat)1
IC = 8 A, IB = 0.4 A
0.5
V
VCE(sat)2
IC =
20 A, I
B =
2 A
1.5
V
Base to emitter saturation voltage
VBE(sat)1
IC =
8 A, I
B =
0.4 A
1.5
V
VBE(sat)2
IC = 20 A, IB = 2 A
2.5
V
Transition frequency
fT
VCE =
10 V, I
C =
0.5 A, f = 10 MHz
25
MHz
Turn-on time
ton
IC =
3 A, I
B1 =
0.8 A, I
B2 = 0.8 A,
0.5
s
Storage time
tstg
VCC = 50 V
1.2
s
Fall time
tf
0.2
s
Rank
Q
P
hFE2
90 to 180
130 to 260
15.0±0.3
5.0±0.2
11.0±0.2
2.0±0.2
2.0±0.1
0.6±0.2
1.1±0.1
5.45±0.3
10.9±0.5
123
21.0
±0.5
16.2
±0.5
Solder
Dip
(3.5)
15.0
±0.2
(0.7)
φ 3.2±0.1
(3.2)
Ordering can be made by the common rank (PQ rank hFE2 = 90 to 260) in the
rank classification.
1 : Base
2 : Collector
3 : Emitter
EIAJ : SC-96
TOP-3F-A Package
Note) *: Rank classification
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| 2SB1156P | 20 A, 80 V, PNP, Si, POWER TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1156Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 20A I(C) | TO-247VAR |
| 2SB1156R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 20A I(C) | TO-247VAR |
| 2SB1157 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
| 2SB1158 | 制造商:SAVANTIC 制造商全称:Savantic, Inc. 功能描述:Silicon PNP Power Transistors |
| 2SB1159 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
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