- 您现在的位置：买卖IC网 > PDF目录33335 > 2SB1180P (PANASONIC CORP) 8 A, 60 V, PNP, Si, POWER TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SB1180P |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 8 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封装： | ROHS COMPLIANT, I-G1, 4 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 252K |
| 代理商： | 2SB1180P |
Power Transistors
1
Publication date: March 2003
SJD00056AED
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SB1180
VCEO
IC
= 30 mA, I
B
= 0
60
V
(Base open)
2SB1180A
80
Collector-base cutoff
2SB1180
ICBO
VCB = 60 V, IE = 0
100
A
current (Emitter open)
2SB1180A
VCB
= 80 V, I
E
= 0
100
Emitter-base cutoff current (Collector open)
IEBO
VEB = 7 V, IC = 0
2mA
Forward current transfer ratio
hFE1 *
VCE = 3 V, IC = 4 A
2 000
10 000
hFE2
VCE
= 3 V, I
C
= 8 A
500
Collector-emitter saturation voltage
VCE(sat)
IC = 4 A, IB = 8 mA
1.5
V
Base-emitter saturation voltage
VBE(sat)
IC = 4 A, IB = 8 mA
2V
Transition frequency
fT
VCE
= 3 V, I
C
= 1 A, f = 1 MHz
20
MHz
Turn-on time
ton
IC
= 4 A, I
B1
= 8 mA, I
B2
= 8 mA
0.5
s
Storage time
tstg
VCC = 50 V
2.0
s
Fall time
tf
1.0
s
2SB1180, 2SB1180A
Silicon PNP epitaxial planar type darlington
For medium-speed voltage switching
Complementary to 2SD1750, 2SD1750A
■ Features
High forward current transfer ratio h
FE
I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
7.0±0.3
3.5±0.2
0 to 0.15
12.6
±
0.3
7.2
±
0.3
2.5
±
0.2
2.5
±
0.2
(1.0)
1.0
±
0.2
3.0±0.2
2.0±0.2
1.1±0.1
0.75±0.1
0.9±0.1
0 to 0.15
0.4±0.1
2.3±0.2
4.6±0.4
123
Unit: mm
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SB1180
VCBO
60
V
(Emitter open)
2SB1180A
80
Collector-emitter voltage 2SB1180
VCEO
60
V
(Base open)
2SB1180A
80
Emitter-base voltage (Collector open)
VEBO
7V
Collector current
IC
8A
Peak collector current
ICP
12
A
Collector power dissipation
PC
15
W
Ta = 25°C
1.3
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Note) Self-supported type package is also prepared.
Rank
Q
P
hFE1
2 000 to 5 000 4 000 to 10 000
Internal Connection
B
C
E
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相关PDF资料 |
PDF描述 |
|---|---|
| 2SB1183F5TLA | 2000 mA, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1188-Q | 2000 mA, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1188-P | 2000 mA, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1197KT146/R | 800 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1197KT146Q | 800 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1180Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 8A I(C) | TO-221VAR |
| 2SB1180R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 8A I(C) | TO-221VAR |
| 2SB1181 | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:Power Transistor |
| 2SB1181F5 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-252VAR |
| 2SB1181F5P | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-252 |
发布紧急采购，3分钟左右您将得到回复。