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参数资料
| 型号： | 2SB1189T100P |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 700 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SC-62, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 52K |
| 代理商： | 2SB1189T100P |
2SB1189 / 2SB1238
Transistors
Medium power transistor (
80V, 0.7A)
2SB1189 / 2SB1238
!
Features
1) High breakdown voltage, BVCEO=
80V, and
high current, IC=
0.7A.
2) Complements the 2SD1767 / 2SD1859.
!
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
80
5
0.7
2
1
150
55~+150
Unit
V
A
0.5
2
1
2SB1238
2SB1189
W
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector power
dissipation
1 When mounted on a 40×40×0.7 mm ceramic board.
2 Printed circuit board 1.7 mm thick, collector plating 1cm2 or larger.
!
Packaging specifications and hFE
Type
2SB1189
MPT3
PQR
BD
T100
1000
2SB1238
ATV
PQR
TV2
2500
Denotes hFE
Package
hFE
Marking
Code
Basic ordering unit (pieces)
!
External dimensions (Units : mm)
(1) Emitter
(2) Collector
(3) Base
0.45
1.05
Taping specifications
0.5
(1)
0.65Max.
2.54
(2)
2.54
(3)
6.8
1.0
14.5
0.9
4.4
2.5
2SB1189
ROHM : MPT3
EIAJ : SC-62
2SB1238
ROHM : ATV
(1) Base
(2) Collector
(3) Emitter
1.5
0.4
1.5
0.4
1.6
0.5
3.0
0.4
1.5
(3)
4.5
(1)
(2)
0.5
4.0
2.5
1.0
!
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
fT
Cob
80
5
0.2
100
14
0.5
0.4
20
V
A
V
MHz
pF
IC
=50A
IC
=2mA
IE
=50A
VCB
=50V
VEB
=4V
hFE
82
390
VCE/IC
=3V/0.1A
IC/IB
=500mA/50mA
VCE
=10V, IE=50mA, f=100MHz
VCB
=10V, IE=0A, f=1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1189T100Q | 功能描述:两极晶体管 - BJT PNP 80V 0.7A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB1189T100Q/R | 制造商:ROHM Semiconductor 功能描述:Transistor, PNP, Driver, -80V, -0.7A, M |
| 2SB1189T100R | 功能描述:两极晶体管 - BJT PNP 80V 0.7A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB1190 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220AB -200V -1A 25W BCE |
| 2SB1190A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 180V V(BR)CEO | 1A I(C) | TO-220AB |
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