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参数资料
| 型号： | 2SB1203QTP-FA |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | TP-FA, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 100K |
| 代理商： | 2SB1203QTP-FA |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High-Current Switching Applications
Ordering number:ENN2085B
2SB1203/2SD1803
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2503TN (KT)/92098HA (KT)/8309MO/3097AT, TS No.2085—1/5
Package Dimensions
unit:mm
2045B
[2SB1203/2SD1803]
Applications
Relay drivers, high-speed inverters, converters, and
other general high-current switching applications.
Features
Low collector-to-emitter saturation voltage.
High current and high fT.
Excellent linearity of hFE.
Fast switching speed.
Small and slim package making it easy to make
2SB1203/2SD1803-applied sets smaller.
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
unit:mm
2044B
[2SB1203/2SD1803]
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
5.0
6.5
0.85
0.7
0.6
1.5
5.5
7.0
0.8
1.6
7.5
0.5
1.2
2.3
0.5
1
23
4
2.3
6.5
2.3
0.5
1.5
5.5
0.8
7.0
1.2
2.5
5.0
0.85
0.5
1.2
0 to 0.2
2.3
0.6
12
4
3
相关PDF资料 |
PDF描述 |
|---|---|
| 2SB1203TTP | 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1203STP-FA | 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1203QTP | 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1803TP-FA | 5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1203TP-FA | 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1203S | 制造商:SANYO Semiconductor Co Ltd 功能描述: |
| 2SB1203SE | 制造商:SANYO Semiconductor Co Ltd 功能描述: |
| 2SB1203S-E | 功能描述:两极晶体管 - BJT BIP PNP 5A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB1203S-H | 功能描述:两极晶体管 - BJT BIP PNP 5A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB1203S-H-TL-E | 功能描述:两极晶体管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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