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参数资料
| 型号： | 2SB1220GR |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 50 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, SMINI3-F2, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 279K |
| 代理商： | 2SB1220GR |
Transistors
1
Publication date: April 2007
SJC00354AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1220G
Silicon PNP epitaxial planar type
For high breakdown voltage low-noise amplification
Complementary to 2SD1821G
■ Features
High collector-emitter voltage (Base open) V
CEO
Low noise voltage NV
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
150
V
Collector-emitter voltage (Base open)
VCEO
150
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
50
mA
Peak collector current
ICP
100
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
■ Electrical Characteristics T
a = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 100 A, IB = 0
150
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 0
5V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 100 V, I
E
= 0
1
A
Forward current transfer ratio *
hFE
VCE = 5 V, IC = 10 mA
130
450
Collector-emitter saturation voltage
VCE(sat)
IC = 30 mA, IB = 3 mA
1V
Transition frequency
fT
VCB
= 10 V, I
E
= 10 mA, f = 200 MHz
200
MHz
Collector output capacitance
Cob
VCB
= 10 V, I
E
= 0, f = 1 MHz
4
pF
(Common base, input open circuited)
Noixe voltage
NV
VCE
= 10 V, I
C
= 1 mA, G
V
= 80 dB
150
mV
Rg = 100 k, Function = FLAT
Rank
R
S
T
hFE
130 to 220
185 to 330
260 to 450
■ Package
Code
SMini3-F2
Marking Symbol: I
Pin Name
1. Base
2. Emitter
3. Collector
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
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|---|---|
| 2SB1220GRL | 功能描述:TRANS PNP 150VCEO 50MA SMINI-3 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SB12210QA | 功能描述:TRANS PNP 200VCEO 70MA TO-92NL RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SB1221-Q | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1223 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTORTO-220ML -70V -4A 20W BCE |
| 2SB1224 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220ML -70V -7A 25W BCE |
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