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参数资料
| 型号： | 2SB1230-P |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 15 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 封装： | TO-3PB, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 40K |
| 代理商： | 2SB1230-P |
2SB1230 / 2SD1840
No.3259-1/4
Applications
Motor drivers, relay drivers, converters and other general high-current switching applications.
Features
Large current capacity and wide ASO.
Low saturation voltage.
Specifications ( ) : 2SB1230
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)110
V
Collector-to-Emitter Voltage
VCEO
(--)100
V
Emitter-to-Base Voltage
VEBO
(--)6
V
Collector Current
IC
(--)15
A
Collector Current (Pulse)
ICP
(--)25
A
Base Current
IB
(--)5
A
Collector Dissipation
PC
3.0
W
Tc=25
°C
100
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)100V, IE=0A
(--)0.1
mA
Emitter Cutoff Current
IEBO
VEB=(--)5V, IC=0A
(--)0.1
mA
DC Current Gain
hFE1VCE=(--)2V, IC=(--)1.5A
50*
140*
hFE2VCE=(--)2V, IC=(--)6A
20
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)6A, IB=(--)0.6A
(--)0.8
V
Base-to-Emitterr Saturation Voltage
VBE(sat)
IC=(--)6A, IB=(--)0.6A
(--)1.5
V
Continued on next page.
* : For the hFE1 of the 2SB1230 / 2SD1840, specify two ranks or more in principle.
Rank
P
Q
hFE
50 to 100
70 to 140
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN3259A
80906 / 12006DA MS IM TB-00002034 / D1003TN (KT) / 92098HA (KT) / 9140MH, JK (KOTO)
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
SANYO Semiconductors
DATA SHEET
2SB1230 / 2SD1840
PNP / NPN Epitaxial Planar Silicon Transistors
High-Current Switching
Applications
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| 2SB1236ATV2P | 功能描述:两极晶体管 - BJT DVR PNP 160V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB1236ATV2Q | 功能描述:两极晶体管 - BJT DVR PNP 160V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB1236TV2Q | 功能描述:两极晶体管 - BJT DVR PNP 120V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB1236TV2R | 功能描述:两极晶体管 - BJT DVR PNP 120V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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