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参数资料
| 型号： | 2SB1230-P |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 15 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 封装： | TO-3PB, 3 PIN |
| 文件页数： | 4/4页 |
| 文件大小： | 40K |
| 代理商： | 2SB1230-P |
2SB1230 / 2SD1840
No.3259-4/4
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
PS
0
20
40
60
80
100
120
140
160
0
20
60
80
100
120
40
ITR09391
2SB1230 / 2SD1840
0
20
40
60
80
100
120
140
160
0
0.5
2.0
2.5
3.0
3.5
1.0
1.5
ITR09390
2SB1230 / 2SD1840
ITR09392
10ms
1ms
DC
operation
100ms
ICP=25A
IC=15A
10
1.0
57
2
3
100
57
22
3
0.1
1.0
2
5
3
5
3
2
5
3
10
100
s
500
s
200
s
A S O
2SB1230 / 2SD1840
Tc=25
°C
Single Pulse
For PNP minus sign is omitted.
PC -- Ta
Collector-to-Emitter Voltage, VCE -- V
Collector
Current,
I
C
--
A
No
heat
sink
Ambient Temperature, Ta --
°C
Collector
Dissipation,
P
C
-
W
PC -- Tc
Case Temperature, Tc --
°C
Collector
Dissipation,
P
C
-
W
This catalog provides information as of January, 2006. Specifications and information herein are subject
to change without notice.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD1840-Q | 15 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 2SB1238TV2/R | 700 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1238TV2R | 700 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1261-ZL-E2 | 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1261-Z-E2 | 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
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| 2SB1234-TB-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANS DARL PNP 80V 50A SOT23 |
| 2SB1236ATV2P | 功能描述:两极晶体管 - BJT DVR PNP 160V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB1236ATV2Q | 功能描述:两极晶体管 - BJT DVR PNP 160V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB1236TV2Q | 功能描述:两极晶体管 - BJT DVR PNP 120V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB1236TV2R | 功能描述:两极晶体管 - BJT DVR PNP 120V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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