参数资料
型号: 2SB1231-P
元件分类: 功率晶体管
英文描述: 25 A, 100 V, PNP, Si, POWER TRANSISTOR
封装: TO-3PB, 3 PIN
文件页数: 1/5页
文件大小: 51K
代理商: 2SB1231-P
2SB1231 / 2SD1841
No.3260-1/5
Applications
Motor drivers, relay drivers, converters and other general high-current switching applications.
Features
Large current capacity and wide ASO.
Low saturation voltage.
( ) : 2SB1231
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)110
V
Collector-to-Emitter Voltage
VCEO
(--)100
V
Emitter-to-Base Voltage
VEBO
(--)6
V
Collector Current
IC
(--)25
A
Collector Current (Pulse)
ICP
(--)40
A
Base Current
IB
(--)8
A
Collector Dissipation
PC
3.0
W
Tc=25°C
120
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN3260B
31407DA TI IM TC-00000575 / D1003TN(KT) / 92098HA(KT) / 71095TS / 7190MH, TA (KOTO)
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
SANYO Semiconductors
DATA SHEET
2SB1231 / 2SD1841
2SB1231 : PNP Epitaxial Planar Silicon Transistor
2SD1841 : NPN Triple Diffused Planar Silicon Transistor
100V / 25A Switching
Applications
相关PDF资料
PDF描述
2SB1234 200 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SD1851 200 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SB1237TV2/R 1000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1237TV2Q 1000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1237TV2R 1000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SB1234-TB-E 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANS DARL PNP 80V 50A SOT23
2SB1236ATV2P 功能描述:两极晶体管 - BJT DVR PNP 160V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SB1236ATV2Q 功能描述:两极晶体管 - BJT DVR PNP 160V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SB1236TV2Q 功能描述:两极晶体管 - BJT DVR PNP 120V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SB1236TV2R 功能描述:两极晶体管 - BJT DVR PNP 120V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2