参数资料
型号: 2SB1238TV2
元件分类: 小信号晶体管
英文描述: 700 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
文件页数: 1/3页
文件大小: 68K
代理商: 2SB1238TV2
2SB1189 / 2SB1238
Transistors
Rev.A
1/2
Medium power transistor (
80V, 0.7A)
2SB1189 / 2SB1238
Features
1) High breakdown voltage, BVCEO=
80V, and
high current, IC=
0.7A.
2) Complements the 2SD1767 / 2SD1859.
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
80
5
0.7
2
1
150
55 to +150
Unit
V
A
0.5
2
1
2SB1238
2SB1189
W
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector power
dissipation
1 When mounted on a 40×40×0.7 mm ceramic board.
2 Printed circuit board 1.7 mm thick, collector plating 1cm2 or larger.
Packaging specifications and hFE
Type
2SB1189
MPT3
QR
BD
T100
1000
2SB1238
ATV
QR
TV2
2500
Denotes hFE
Package
hFE
Marking
Code
Basic ordering unit (pieces)
External dimensions (Unit : mm)
(1) Emitter
(2) Collector
(3) Base
0.45
1.05
Taping specifications
0.5
(1)
0.65Max.
2.54
(2)
2.54
(3)
6.8
1.0
14.5
0.9
4.4
2.5
2SB1189
ROHM : MPT3
EIAJ : SC-62
2SB1238
ROHM : ATV
(1) Base
(2) Collector
(3) Emitter
1.5
0.4
1.5
0.4
1.6
0.5
3.0
0.4
1.5
(3)
4.5
(1)
(2)
0.5
4.0
2.5
1.0
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
fT
Cob
80
5
0.2
100
14
0.5
0.4
20
V
A
V
MHz
pF
IC
=50A
IC
=2mA
IE
=50A
VCB
=50V
VEB
=4V
hFE
120
390
VCE/IC
=3V/0.1A
IC/IB
=500mA/50mA
VCE
=10V, IE=50mA, f=100MHz
VCB
=10V, IE=0A, f=1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
相关PDF资料
PDF描述
2SB1197-R-TP 800 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1197KT146PQ 800 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1197KT146PR 800 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1198KT146PR 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1198KT146/QR 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SB1238TV2P 功能描述:两极晶体管 - BJT DRIVER PNP 80V 0.7A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SB1238TV2Q 功能描述:两极晶体管 - BJT PNP 80V 0.7A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SB1238TV2R 功能描述:两极晶体管 - BJT PNP 80V 0.7A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SB1239TV2 功能描述:达林顿晶体管 DARL PNP 40V 2A RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel
2SB1240 制造商: 功能描述:Bipolar Junction Transistor, PNP Type, SIP