参数资料
型号: 2SB1251
厂商: PANASONIC CORP
元件分类: 功率晶体管
英文描述: 4 A, 90 V, PNP, Si, POWER TRANSISTOR, TO-220F
封装: TO-220, FULL PACK-3
文件页数: 2/4页
文件大小: 192K
代理商: 2SB1251
2
Power Transistors
2SB1251
PC —Ta
IC —VCE
VCE(sat) —IC
VBE(sat) —IC
hFE —IC
Cob —VCB
ton, tstg, tf — IC
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
60
50
40
30
20
10
(1) T
C=Ta
(2) With a 100
× 100 × 2mm
Al heat sink
(3) With a 50
× 50 × 2mm
Al heat sink
(4) Without heat sink
(P
C=2W)
(1)
(2)
(3)
(4)
Ambient temperature Ta (C)
Collector
power
dissipation
P
C
(W
)
0
–12
–10
–8
–2
–6
–4
0
–6
–5
–4
–3
–2
–1
T
C=25C
– 0.1mA
– 0.2mA
– 0.3mA
– 0.4mA
– 0.5mA
I
B=–3mA
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
– 0.1
–1
–10
–100
– 0.3
–3
–30
– 0.1
–100
–10
–1
– 0.3
–3
–30
I
C/IB=1000
25C
–25C
T
C=100C
Collector current I
C
(A)
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V
)
– 0.1
–1
–10
–100
– 0.3
–3
–30
– 0.1
–100
–10
–1
– 0.3
–3
–30
I
C/IB=1000
T
C=–25C
25C
100C
Collector current I
C
(A)
Base
to
emitter
saturation
voltage
V
BE(sat)
(V
)
– 0.01
– 0.1
–1
–10
– 0.03
– 0.3
–3
10
30
100
300
1000
3000
10000
30000
100000
V
CE=–5V
T
C=100C
25C
–25C
Collector current I
C
(A)
Forward
current
transfer
ratio
h
FE
–1
–3
–10
–30
–100
1
1000
100
10
3
30
300
I
E=0
f=1MHz
T
C=25C
Collector to base voltage V
CB
(V)
Collector
output
capacitance
C
ob
(pF
)
0–8
–2
–6
–4
0.01
0.03
0.1
0.3
1
3
10
30
100
t
stg
t
on
t
f
Pulsed t
w=1ms
Duty cycle=1%
I
C/IB=1000
(–I
B1=IB2)
V
CC=–50V
T
C=25C
Collector current I
C
(A)
Switching
time
t
on
,t
stg
,t
f
(
s
)
–1
–10
–100
–1000
–3
–30
–300
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
t=1ms
I
CP
I
C
10ms
Non repetitive pulse
T
C=25C
DC
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
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