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参数资料
| 型号： | 2SB1260T100Q |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SC-62, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 89K |
| 代理商： | 2SB1260T100Q |
2SB1260 / 2SB1181 / 2SB1241
Transistors
Rev.C
1/3
Power Transistor (
80V, 1A)
2SB1260 / 2SB1181 / 2SB1241
Features
1) Hight breakdown voltage and high current.
BVCEO=
80V, IC = 1A
2) Good hFE linearty.
3) Low VCE(sat).
4) Complements the 2SD1898 / 2SD1863 /
2SD1733.
Structure
Epitaxial planar type
PNP silicon transistor
External dimensions (Unit : mm)
2SB1260
(1) Base
(2) Collector
(3) Emitter
ROHM : MPT3
EIAJ : SC-62
0.1
+
0.2
0.05
+0.1
0.1
+0.2
0.1
(3)
(2)
(1)
4.0
1.0
±
0.2
0.5
±
0.1
2.5
3.0
±0.2
1.5
±0.1
1.5
±0.1
0.4
±0.1
0.5
±0.1
0.4
±0.1
0.4
1.5
4.5
1.6
±0.1
±
0.3
2SB1241
(1) Emitter
(2) Collector
(3) Base
ROHM : ATV
1.0
6.8
±0.2
2.5
±0.2
1.05
0.45
±0.1
2.54 2.54
0.5
±0.1
0.9
4.4
±
0.2
14.5
±
0.5
(1)
(2)
(3)
0.65Max.
(1) Base
(2) Collector
(3) Emitter
ROHM : CPT3
EIAJ : SC-63
2SB1181
0.1
+0.2
0.1
+0.2
+
0.3
0.1
2.3
±0.2
2.3
±0.2
0.65
±0.1
0.9
0.75
1.0
±0.2
0.55
±0.1
9.5
±
0.5
5.5
1.5
±
0.3
2.5
1.5
2.3
0.5
±0.1
6.5
±0.2
5.1
C0.5
(3)
(2)
(1)
0.9
Denotes hFE
Abbreviated
symbol: BE
Absolute maximum ratings (Ta=25
°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
1 2SB1260 : Pw=20ms duty=1/2
2SB1241 : Single pulse, Pw
=100ms
2 2SB1260 : When mounted on a 40×40×0.7 mm ceramic board.
3 2SB1241 : Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
Parameter
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
80
V
A (DC)
W
°C
80
5
1
ICP
A (Pulse)
2 1
0.5
2
1
3
10
2SB1260
2SB1241, 2SB1181
2SB1181
150
55 to 150
Symbol
Limits
Unit
W (Tc=25
°C)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SB1260T100/Q | 1 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 2SB1261-Z-T1K | 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1261-Z-T2K | 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1261-Z-T1 | 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1261-ZM | 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1260T100R | 功能描述:两极晶体管 - BJT PNP 80V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB1261-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:PNP PWR Transistor,60V,3.0A,TO-252 制造商:Renesas 功能描述:Trans GP BJT PNP 60V 3A 3-Pin(2+Tab) TO-252 |
| 2SB1261-E1-AZ-M-Z | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SB1261-L-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SB1261-L-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
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