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参数资料
| 型号： | 2SB1260T100Q |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SC-62, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 89K |
| 代理商： | 2SB1260T100Q |
2SB1260 / 2SB1181 / 2SB1241
Transistors
Rev.C
3/3
Fig.4
Collector-emitter saturation
voltage vs. collector current
0.01
0.02
0.05
0.1
0.2
0.5
1
2
Ta
=25°C
IC/IB
=20
1 2
5 10 20 50 100 200 500
2000
1000
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V
)
COLLECTOR CURRENT : IC
(mA)
10
Fig.5
Gain bandwidth product
vs. emitter current
1
2
5
10
20
50 100 200
500 1000
1
2
5
10
20
50
100
200
500
1000
EMITTER CURRENT : IE
(mA)
TRANSITION
FREQUENCY
:
f
T
(MHz)
Ta
=25
°C
VCE
= 5V
Fig.6
Collector output capacitance
vs. collector-base voltage
-0.2
0.1
0.5 -1 2
5 10 20 50 100
1
2
5
10
20
50
100
200
500
1000
Ta
=25
°C
f
=1MHz
IE
=0A
COLLECTOR
OUTPUT
CAPACITANCE
:
Cob
(pF)
COLLECTOR TO BASE VOLTAGE : VCB
(V)
Fig. 7
Emitter input capacitance
vs. emitter-base voltage
0.1
10
20
0.2
0.5
1
2
200
1000
5
10
500
100
50
Ta
=25
°C
f
=1MHz
IC
=0A
EMITTER
INPUT
CAPACITANCE
:
Cib
(pF
)
EMITTER TO BASE VOLTAGE : VEB
(V)
0.1
1
10
100
COLLECTOR
CURRENT
:
I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.8 Safe operating area
(2SB1260)
0.001
0.01
0.1
1
10
Ta
=25°C
Single
nonrepetitive
pulse
IC Max.(Pulse)
IC Max.
P
W
=10ms
P
W
=100
ms
DC
Fig.9
Safe operating area
(2SB1241)
12
5
0.1 0.2 0.5
10 20 50 100200 5001000
COLLECTOR
CURRENT
:
I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
10
5
2
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
Ta
=25°C
Single
nonrepetitive
pulse
IC Max.(Pulse)
P
W
=
10ms
P
W
=
100ms
DC
Printed circuit board:
1.7 mm thick with collector
copper plating at least 1 cm
2.
0.5
0.2
0.1
1 2
20
10
5
50 100
0.01
0.05
0.02
0.1
0.5
0.2
1
5
2
P
W
=
100ms
Ta
=25°C
Single
nonrepetitive
pulse
COLLECTOR
CURRENT
:
I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.10 Safe operating area
(2SB1181)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SB1260T100/Q | 1 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 2SB1261-Z-T1K | 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1261-Z-T2K | 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1261-Z-T1 | 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1261-ZM | 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1260T100R | 功能描述:两极晶体管 - BJT PNP 80V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB1261-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:PNP PWR Transistor,60V,3.0A,TO-252 制造商:Renesas 功能描述:Trans GP BJT PNP 60V 3A 3-Pin(2+Tab) TO-252 |
| 2SB1261-E1-AZ-M-Z | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SB1261-L-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SB1261-L-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
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