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参数资料
| 型号： | 2SB1260T100Q |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SC-62, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 89K |
| 代理商： | 2SB1260T100Q |
2SB1260 / 2SB1181 / 2SB1241
Transistors
Rev.C
2/3
Electrical characteristics (Ta=25
°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Parameter
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
Cob
Min.
80
5
82
2SB1260, 2SB1181
2SB1181, 2SB1241
2SB1241
2SB1181
2SB1260
100
25
1
390
0.4
VIC
= 50
A
IC
= 1mA
IE
= 50
A
VCB
= 60V
VEB
= 4V
VCE
= 3V, IC= 0.1A
IC/IB
= 500mA/ 50mA
VCE
= 10V, IE=50mA, f=100MHz
VCB
= 10V
IE
=0A
f
=1MHz
V
A
120
390
V
MHz
fT
pF
20
pF
Typ.
Max.
Unit
Conditions
Packaging specifications and hFE
Package
Code
Taping
Basic ordering
unit (pieces)
2500
1000
PQR
hFE
2SB1260
TL
QR
2SB1241
PQR
2SB1181
TV2
T100
Type
hFE values are classified as follows :
Item
P
Q
R
hFE
82 to 180
120 to 270
180 to 390
Electrical characteristic curves
Fig.1
Grounded emitter propagation
characteristics
0
0.1
1
100
1000
BASE TO EMITTER VOLTAGE : VBE
(V)
COLLECTOR
CURRENT
:
I
C
(mA)
0.8
1.2
1.6
10
0.2 0.4
1.0
1.4
0.6
Ta
=25
°C
VCE
= 5V
Fig.2
Grounded emitter output
characteristics
0
0.2
0.8
1.0
0.4
0.8
1.2
1.6
0.4
0.6
2.0
0.2
0.6
1.0
1.4
1.8
COLLECTOR
CURRENT
:
I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Ta
=25°C
0.5mA
IB
=0mA
1mA
1.5mA
2mA
2.5mA
3mA
3.5mA
4mA
4.5mA
Fig.3
DC current gain vs.
collector current
1 2
5 10 20 50 100 200 500
2000
COLLECTOR CURRENT : IC (mA)
10
DC
CURRENT
GAIN
:
h
FE
1000
20
50
100
200
500
1000
VCE
= 3V
1V
Ta
=25°C
相关PDF资料 |
PDF描述 |
|---|---|
| 2SB1260T100/Q | 1 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 2SB1261-Z-T1K | 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1261-Z-T2K | 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1261-Z-T1 | 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1261-ZM | 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1260T100R | 功能描述:两极晶体管 - BJT PNP 80V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB1261-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:PNP PWR Transistor,60V,3.0A,TO-252 制造商:Renesas 功能描述:Trans GP BJT PNP 60V 3A 3-Pin(2+Tab) TO-252 |
| 2SB1261-E1-AZ-M-Z | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SB1261-L-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SB1261-L-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
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