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参数资料
| 型号： | 2SB1267Q |
| 元件分类： | 功率晶体管 |
| 英文描述： | 8 A, 30 V, PNP, Si, POWER TRANSISTOR |
| 封装： | TO-220MF, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 37K |
| 代理商： | 2SB1267Q |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
30V/8A High-Current Switching Applications
Ordering number:ENN2263A
2SB1267/2SD1903
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11504TN (KT)/O1598HA (KT)/D251MH/5137TA, TS No.2263–1/4
Package Dimensions
unit:mm
2049C
[2SB1267/2SD1903]
C
Electrical Characteristics at Ta = 25C
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220MF
Applications
Suitable for relay drivers, high-speed inverters,
converters and other general high-current switching.
Features
Suitable for sets whose height is restricted.
Low collector to emitter saturation voltage :
VCE(sat)=–0.5V (PNP), 0.4V (NPN) max.
Large current capacity.
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* : The 2SB1267/2SD1903 are classified by 1A hFE as follows :
Continued on next page.
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( ) : 2SB1267
Specifications
Absolute Maximum Ratings at Ta = 25C
10.2
20.9
11.5
9.4
0.8
1.6
1.2
0.9
11.0
8.8
4.5
1.3
0.4
2.55
2.7
12
3
相关PDF资料 |
PDF描述 |
|---|---|
| 2SB1267S | 8 A, 30 V, PNP, Si, POWER TRANSISTOR |
| 2SD1903R | 8 A, 30 V, NPN, Si, POWER TRANSISTOR |
| 2SD1908 | 7 A, 150 V, NPN, Si, POWER TRANSISTOR |
| 2SD1913R | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2SD1913 | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1268R-E | 制造商:ON Semiconductor 功能描述: |
| 2SB1269R-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP 50V 7A TO-220MF |
| 2SB1274 | 制造商:n/a 功能描述:2SB1274 N9H1D |
| 2SB1274R | 功能描述:TRANS PNP 60V 3A TO-220ML RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SB1274S | 功能描述:TRANS PNP 60V 3A TO-220ML RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
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