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参数资料
| 型号： | 2SB1275TLP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1.5 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | CPT3, SC-63, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 82K |
| 代理商： | 2SB1275TLP |
2SB1275 / 2SB1236A
Transistors
Rev.A
1/3
Power Transistor (
160V , 1.5A)
2SB1275 / 2SB1236A
Features
1) High breakdown voltage.(BVCEO
= 160V)
2) Low collector output capacitance.
(Typ. 30pF at VCB
= 10V)
3) High transition frequency.(fT
= 50MHZ)
4) Complements the 2SD1918 / 2SD1857A.
Absolute maximum ratings (Ta = 25
°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
160
5
1.5
1
150
55+150
Unit
V
A(DC)
3
2
1
A(Pulse)
W(Tc
=25
°C)
W
10
2SB1275
2SB1236A
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature
1 Single pulse Pw
=100ms
2 Printed circuit board 1.7mm thick, collector plating 1cm
2 or larger.
External dimensions (Unit : mm)
EIAJ : SC-63
ROHM : CPT3
ROHM : ATV
2SB1236A
2SB1275
0.45
(2) Collector
1.05
(3) Base
Taping specifications
(1) Emitter
0.5
(1)
0.65Max.
2.54
(2)
2.54
(3)
6.8
1.0
14.5
0.9
4.4
2.5
2.3
0.5
1.0
0.5
9.5
2.5
0.8Min.
1.5
6.5
2.3
( 2
)
( 3
)
C0.5
0.65
0.9
( 1
)
0.75
2.3
0.9
1.5
5.5
(3) Emitter(Source)
(2) Collector(Drain)
(1) Base(Gate)
5.1
Packaging specifications and hFE
Type
2SB1275
CPT3
P
TL
2500
2SB1236A
ATV
PQ
TV2
2500
Package
hFE
Code
Basic ordering unit (pieces)
Electrical characteristics (Ta = 25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
fT
Cob
160
5
82
50
30
1
2
180
V
A
V
hFE
82
270
2SB1275
2SB1236A
MHz
pF
IC
= 50A
IC
= 1mA
IE
= 50A
VCB
= 120V
VEB
= 4V
IC/IB
= 1A/0.1A
VCE
= 5V , IC = 0.1A
VCE
= 5V , IE = 0.1A , f = 30MHz
VCB
= 10V , IE =0A , f = 1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
Measured using pulse current.
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| 2SB1236ATV2Q | 1.5 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1278 | 制造商:Distributed By MCM 功能描述:SUB ONLY ROHM TRANSISTOR FTL -80V -.7A .75W ECB |
| 2SB1279 | 制造商:Distributed By MCM 功能描述:SUB ONLY ROHM TRANSISTOR FTL -15V -.2A .3W ECB |
| 2SB1282-4100 | 功能描述:达林顿晶体管 V=-100 IC=4 HFE=1500 RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2SB1283 | 制造商:Shindengen 功能描述: |
| 2SB1284-4000 | 功能描述:达林顿晶体管 VCEO=-100 IC=-10 RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
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