参数资料
型号: 2SB1308
厂商: MICRO COMMERCIAL COMPONENTS
元件分类: 小信号晶体管
英文描述: 3000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: PLASTIC, SOT-89, 3 PIN
文件页数: 2/2页
文件大小: 77K
代理商: 2SB1308
MCC
Revision: 3
2007/03/01
TM
Micro Commercial Components
www.mccsemi.com
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相关PDF资料
PDF描述
2SB1308-P 3000 mA, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1321AS 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1321 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1321Q 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1321AR 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SB1308T100P 功能描述:两极晶体管 - BJT PNP 20V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SB1308T100Q 功能描述:两极晶体管 - BJT PNP 20V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SB1308T100R 功能描述:两极晶体管 - BJT PNP 20V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SB1316TL 功能描述:达林顿晶体管 D-PACK BCE PNP DARL SMT RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel
2SB1319 制造商:Distributed By MCM 功能描述:SUB ONLY TRANS. M-TYPE -30V -5A 1W BCE