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参数资料
| 型号： | 2SB1347P |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 12 A, 160 V, PNP, Si, POWER TRANSISTOR |
| 封装： | TOP-3L-A1, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 211K |
| 代理商： | 2SB1347P |
2SB1347
2
SJD00067BED
VCE(sat) IC
hFE IC
fT IC
PC Ta
IC VCE
IC VBE
Cob VCB
Safe operation area
0
160
40
120
80
50
150
100
200
Collector
power
dissipation
P
C
(W)
Ambient temperature T
a (°C)
(1)TC=Ta
(2)With a 100
×100×2mm
Al heat sink
(3)Without heat sink
(PC=3.5W)
(1)
(2)
(3)
0
12
2
10
4
8
6
24
20
16
12
8
4
Collector
current
I
C
(A)
Collector-emitter voltage V
CE (V)
TC=25C
–200mA
–400mA
–600mA
–800mA
–100mA
–50mA
IB=–1000mA
0
24
20
16
12
8
4
1
3
2
Base-emitter voltage V
BE (V)
Collector
current
I
C
(A)
TC=–25C
100C
25C
VCE=–5V
0.01
0.1
1
10
100
1
10
100
Collector-emitter
saturation
voltage
V
CE(sat)
(V)
Collector current I
C (A)
IC/IB=10
TC=100C
–25C
25C
1
1 000
100
10
0.1
1
10
100
Forward
current
transfer
ratio
h
FE
Collector current I
C (A)
VCE=–5V
TC=100C
25C
–25C
0.01
0.1
1
10
1
1 000
100
10
Collector current I
C (A)
Transition
frequency
f
T
(MHz)
VCE=–5V
f=10MHz
TC=25C
1
10
100
10
104
103
102
Collector
output
capacitance
(Common
base,
input
open
circuited)
C
ob
(pF)
Collector-base voltage V
CB (V)
IE=0
f=1MHz
TC=25C
0.01
1
0.1
1
10
100
10
100
1000
Collector
current
I
C
(A)
Collector-emitter voltage V
CE (V)
t=10ms
t=100ms
ICP
IC
Non repetitive pulse
TC=25C
DC
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相关代理商/技术参数 |
参数描述 |
|---|---|
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