- 您现在的位置：买卖IC网 > PDF目录49897 > 2SB1424T100 3000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SB1424T100 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 2/4页 |
| 文件大小： | 81K |
| 代理商： | 2SB1424T100 |
2SB1424 / 2SA1585S
Transistors
Rev.A
2/3
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Min.
20
6
120
240
35
0.1
390
0.5
VIC
= 50
A
IC
= 1mA
IE
= 50
A
VCB
= 20V
VEB
= 5V
VCE
= 2V, IC= 0.1A
IC/IB
= 2A/ 0.1A
VCE
= 2V, IE=0.5A, f=100MHz
VCB
= 10V, IE=0A, f=1MHz
V
A
V
MHz
pF
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Packaging specifications and hFE
TP
T100
5000
1000
QR
hFE
QR
2SA1585S
2SB1424
Type
Package
Code
Basic ordering
unit (pieces)
Taping
hFE values are classified as follows :
Item
Q
R
hFE
120 to 270
180 to 390
Electrical characteristic curves
1m
2m
5m
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
COLLECTOR
CURRENT
:
I
C
(A)
BASE TO EMITTER VOLTAGE : VBE
(V)
Fig.1
Grounded emitter propagation
characteristics
VCE
= 2V
Ta
=100°C
40°C
25
°C
0
0.4
0.8
1.2
1.6
2.0
0
0.2
0.4
0.6
0.8
1.0
COLLECTOR
CURRENT
:
I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
2mA
6mA
4mA
Ta
=25°C
IB
=0A
8mA
10mA
20mA
12mA
14mA
16mA
18mA
Fig.2
Grounded emitter output
characteristics ( )
0
1
2
3
4
5
0
1
2
3
4
5
COLLECTOR
CURRENT
:
I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Ta
=25°C
20mA
25mA
30mA
35mA
40mA
5mA
15mA
10mA
IB
=0A
45mA
50mA
Fig.3
Grounded emitter output
characteristics ( )
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1606-D | 1.5 A, 160 V, PNP, Si, POWER TRANSISTOR |
| 2SA1606 | 1.5 A, 160 V, PNP, Si, POWER TRANSISTOR |
| 2SC4159 | 1.5 A, 160 V, NPN, Si, POWER TRANSISTOR |
| 2SC4159-E | 1.5 A, 160 V, NPN, Si, POWER TRANSISTOR |
| 2SA1609O17 | 50 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1424T100P | 制造商:ROHM Semiconductor 功能描述:2SB1424T100P |
| 2SB1424T100Q | 功能描述:两极晶体管 - BJT PNP 20V 3A SO-89 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB1424T100R | 功能描述:两极晶体管 - BJT PNP 20V 3A MPT3 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB1427 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1427-T100 | 制造商:ROHM Semiconductor 功能描述: |
发布紧急采购，3分钟左右您将得到回复。