参数资料
型号: 2SB1424T100
元件分类: 小信号晶体管
英文描述: 3000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
文件页数: 3/4页
文件大小: 81K
代理商: 2SB1424T100
2SB1424 / 2SA1585S
Transistors
Rev.A
3/3
2m
5m 0m 20m 50m 100m 200m 500m 1 2
5 10
1m
DC
CURRENT
GAIN
:
h
FE
COLLECTOR CURRENT : IC (A)
5k
2k
1k
500
200
100
50
20
10
5
VCE=
2V
Ta=100
°C
25
°C
40°C
Fig.4
DC current gain vs.
collector current
2
2m
5m
10m
20m
50m
100m
200m
500m
1
2m 5m 10m20m50m100m 200m500m
2
1
5 10
1m
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V)
COLLECTOR CURRENT : IC
(A)
IC/IB
=10
Ta
=100°C
40°C
25
°C
Fig.5
Collector-emitter saturation
voltage vs. collector curren ( )
2
2m
5m
10m
20m
50m
100m
200m
500m
1
2m 5m 10m 20m 50m 100m 200m 500m
2
1
5 10
1m
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V)
COLLECTOR CURRENT : IC
(A)
IC/IB
=20
Ta
=100°C
40°C
25
°C
Fig.6
Collector-emitter saturation
voltage vs. collector current ( )
EMITTER
INPUT
CAPACITANCE
:
C
ib
(pF)
COLLECTOR
OUTPUT
CAPACITANCE
:
C
ob
(pF)
EMITTER TO BASE VOLTAGE : VEB
(V)
COLLECTOR TO BASE VOLTAGE : VCB
(V)
10
20
50
100
200
500
1000
0.1 0.2 0.5 1 2
5 10 20
50
Ta
=25°C
f
=1MHz
IE
=0A
IC
=0A
Cib
Cob
Fig.8
Gain bandwidth product vs.
emitter current
Collector output capacitance vs.
collector-base voltage
2
2m
5m
10m
20m
50m
100m
200m
500m
1
2m 5m 10m20m 50m
2
1
5 10
1m
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V)
COLLECTOR CURRENT : IC
(A)
100m200m500m
40°C
25
°C
Ta=100
°C
IC/IB=50
Fig.7
Collector-emitter saturation
voltage vs. collector current (
)
1
2
5
10
20
50 100 200 5001000
TRANSITION
FREQUENCY
:
f
T
(MHz)
EMITTER CURRENT : IE (mA)
1000
500
200
100
50
20
10
5
2
1
Ta=25
°C
VCE=
2V
Fig.9
Emitter input capacitance vs.
emitter base voltage
相关PDF资料
PDF描述
2SA1606-D 1.5 A, 160 V, PNP, Si, POWER TRANSISTOR
2SA1606 1.5 A, 160 V, PNP, Si, POWER TRANSISTOR
2SC4159 1.5 A, 160 V, NPN, Si, POWER TRANSISTOR
2SC4159-E 1.5 A, 160 V, NPN, Si, POWER TRANSISTOR
2SA1609O17 50 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SB1424T100P 制造商:ROHM Semiconductor 功能描述:2SB1424T100P
2SB1424T100Q 功能描述:两极晶体管 - BJT PNP 20V 3A SO-89 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SB1424T100R 功能描述:两极晶体管 - BJT PNP 20V 3A MPT3 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SB1427 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SB1427-T100 制造商:ROHM Semiconductor 功能描述: