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参数资料
| 型号： | 2SB1431-K-AZ |
| 元件分类： | 功率晶体管 |
| 英文描述： | 8 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 文件页数： | 1/6页 |
| 文件大小： | 132K |
| 代理商： | 2SB1431-K-AZ |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
Muting Circuit Applications
Ordering number:ENN4765
2SC4919
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21505TN (PC)/12599HA (KT)/53094TH (KOTO) BX-8875 No.4765–1/3
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2106A
[2SC4909]
Features
Ultrasmall package permitting applied sets to be
small and slim.
Small output capacitance.
Low collector-to-emitter saturation voltage.
Small ON-resistance.
C
Electrical Characteristics at Ta = 25C
1 : Base
2 : Emitter
3 : Collector
SANYO : SMCP
Marking : DA
Continued on next page
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相关代理商/技术参数 |
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| 2SB1432-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:PNP PWR Transistor,100V,10A,isoTO-220 制造商:Renesas 功能描述:Trans Darlington PNP 100V 10A 3-Pin(3+Tab) TO-220 Isolated |
| 2SB1432-AZ(L) | 制造商:Renesas Electronics 功能描述:PNP |
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| 2SB143400A | 功能描述:TRANS PNP LF AMP 50VCEO MT-2 RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SB14350RA | 功能描述:TRANS PNP 50VCEO 2A MT-3 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
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