参数资料
型号: 2SB1438S
厂商: PANASONIC CORP
元件分类: 小信号晶体管
英文描述: 2000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: MT2, 3 PIN
文件页数: 1/3页
文件大小: 49K
代理商: 2SB1438S
1
Transistor
2SB1438
Silicon PNP epitaxial planer type
For low-frequency output amplification
s Features
q
Low collector to emitter saturation voltage VCE(sat).
q
High collector to emitter voltage VCEO.
q
Allowing supply with the radial taping.
s Absolute Maximum Ratings (Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
MT2 Type Package
2.5
±0.1
4.5
±0.1
14.5
±0.5
2.5
±0.5 2.5±0.5
2.5
±0.1
6.9
±0.1
1.05
±0.05
(1.45)
4.0
0.7
0.8
0.15
0.5
0.2
1.0
0.65 max.
0.45
+0.1
–0.05
0.45
+0.1
–0.05
3
2
1
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
*
Tj
Tstg
Ratings
–100
–5
–3
–2
1
150
–55 ~ +150
Unit
V
A
W
C
s Electrical Characteristics (Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
VCBO
VCEO
VEBO
hFE1
*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
VCB = –50V, IE = 0
IC = –10A, IE = 0
IC = –1mA, IB = 0
IE = –10A, IC = 0
VCE = –2V, IC = –200mA
VCE = –2V, IC = –1A
*2
IC = –1A, IB = –50mA
*2
IC = –1A, IB = –50mA
*2
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min
–100
–5
120
60
typ
– 0.17
– 0.85
90
70
max
– 0.1
340
– 0.3
–1.2
90
Unit
A
V
MHz
pF
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
*1h
FE1 Rank classification
Rank
R
S
hFE1
120 ~ 240
170 ~ 340
*2 Pulse measurement
1.2
±0.1
0.65
max.
0.45 0.1
0.05
+
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
(HW type)
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