参数资料
型号: 2SB1431-K
元件分类: 功率晶体管
英文描述: 8 A, 100 V, PNP, Si, POWER TRANSISTOR
文件页数: 1/4页
文件大小: 250K
代理商: 2SB1431-K
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
相关PDF资料
PDF描述
2SB1431-L 8 A, 100 V, PNP, Si, POWER TRANSISTOR
2SB1431-AZ 8 A, 100 V, PNP, Si, POWER TRANSISTOR
2SB1431-K-AZ 8 A, 100 V, PNP, Si, POWER TRANSISTOR
2SB1431-K-AZ 8 A, 100 V, PNP, Si, POWER TRANSISTOR
2SB1437 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SB1431-K-AZ 制造商:Renesas Electronics Corporation 功能描述:
2SB1432-AZ 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:PNP PWR Transistor,100V,10A,isoTO-220 制造商:Renesas 功能描述:Trans Darlington PNP 100V 10A 3-Pin(3+Tab) TO-220 Isolated
2SB1432-AZ(L) 制造商:Renesas Electronics 功能描述:PNP
2SB1432-AZ-K 制造商:Renesas Electronics 功能描述:PNP 制造商:Renesas Electronics 功能描述:PNP Bulk
2SB143400A 功能描述:TRANS PNP LF AMP 50VCEO MT-2 RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)(最大):1A 电压 - 集电极发射极击穿(最大):30V Ib、Ic条件下的Vce饱和度(最大):200mV @ 100mA,1A 电流 - 集电极截止(最大):100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR