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参数资料
| 型号： | 2SB1446S |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | MT2, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 49K |
| 代理商： | 2SB1446S |
1
Transistor
2SB1446
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD2179
s Features
q
Low collector to emitter saturation voltage VCE(sat).
q
Allowing supply with the radial taping.
s Absolute Maximum Ratings (Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
MT2 Type Package
2.5
±0.1
4.5
±0.1
14.5
±0.5
2.5
±0.5 2.5±0.5
2.5
±0.1
6.9
±0.1
1.05
±0.05
(1.45)
4.0
0.7
0.8
0.15
0.5
0.2
1.0
0.65 max.
0.45
+0.1
–0.05
0.45
+0.1
–0.05
3
2
1
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
*
Tj
Tstg
Ratings
–50
–5
–7
–5
1
150
–55 ~ +150
Unit
V
A
W
C
s Electrical Characteristics (Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
VCBO
VCEO
VEBO
hFE1
*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
VCB = –20V, IE = 0
IC = –10A, IE = 0
IC = –1mA, IB = 0
IE = –10A, IC = 0
VCE = –2V, IC = –500mA
*2
VCE = –2V, IC = –2.5A
*2
IC = –2A, IB = –100mA
*2
IC = –2A, IB = –100mA
*2
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min
–50
–5
120
60
typ
– 0.2
– 0.85
70
90
max
– 0.1
340
– 0.3
–1.2
120
Unit
A
V
MHz
pF
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
*1h
FE1 Rank classification
Rank
R
S
hFE1
120 ~ 240
170 ~ 340
*2 Pulse measurement
1.2
±0.1
0.65
max.
0.45 0.1
0.05
+
–
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
(HW type)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1448-7100 | 功能描述:达林顿晶体管 VCEO=-100 IC=-15 RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2SB1448-7112 | 功能描述:达林顿晶体管 VCEO=-100 IC=-15 RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2SB1449R-DL-E | 制造商:SANYO 功能描述:PNP 50V 5A 70 to 280 SMP-FD Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP 50V 5A SOT404 |
| 2SB1453-K-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SB1457(T6CANO,F,M | 功能描述:TRANS PNP 2A 100V TO226-3 制造商:toshiba semiconductor and storage 系列:- 包装:散装 零件状态:停產 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:2A 电压 - 集射极击穿（最大值）:100V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:1.5V @ 1mA，1A 电流 - 集电极截止（最大值）:10μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:2000 @ 1A，2V 功率 - 最大值:900mW 频率 - 跃迁:50MHz 工作温度:150°C（TJ） 安装类型:通孔 封装/外壳:TO-226-3，TO-92-3 长体 供应商器件封装:TO-92MOD 标准包装:1 |
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