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参数资料
| 型号： | 2SB1465 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 0.3 A, 300 V, PNP, Si, POWER TRANSISTOR |
| 文件页数： | 1/4页 |
| 文件大小： | 184K |
| 代理商： | 2SB1465 |
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DARLINGTON TRASISTOR
2SB1465
PNP SILICON EPITAXIAL TRANSISTOR
(DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
Document No. D16130EJ2V0DS00 (2nd edition)
Date Published November 2006 NS CP(K)
Printed in Japan
2002
The 2SB1465 is a mold power darlington transistor developed for low-frequency power amplifier and low-speed
switching. This transistor is ideal for use in a direct drive from IC output to relay drivers in switching equipment and
pulse motor drivers or relay drivers in such as OA and FA equipments.
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Collector to base voltage
VCBO
300
V
Collector to emitter voltage
VCEO
300
V
Emitter to base voltage
VEBO
7
V
Collector current (DC)
IC(DC)
300
mA
Collector current (pulse)
Note
IC(pulse)
600
mA
Base current
IB(DC)
30
mA
Total power dissipation (TC = 25
°C)
PT1
25
W
Total power dissipation (TA = 25
°C)
PT2
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Note PW
≤ 300
μs, duty cycle ≤ 10%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base (B)
2. Collector (C)
3. Emitter (E)
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| 2SB1477F31 | 5 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-247 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1472-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANS DARL PNP 60V 7A TO-220MF |
| 2SB1474TL | 功能描述:达林顿晶体管 DARL PNP 80V 4A RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2SB1481(Q) | 制造商:Toshiba 功能描述:PNP -100V -4A 2000 TO220NIS 制造商:Toshiba 功能描述:PNP -100V -4A 2000 TO220NIS Bulk 制造商:Toshiba America Electronic Components 功能描述:Semi, Bipolar, Transistor, PNP, Power, D |
| 2SB1481(TOJS,Q,M) | 功能描述:TRANS PNP 4A 100V TO220-3 制造商:toshiba semiconductor and storage 系列:- 包装:散装 零件状态:停產 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:4A 电压 - 集射极击穿（最大值）:100V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:1.5V @ 6mA，3A 电流 - 集电极截止（最大值）:2μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:2000 @ 3A，2V 功率 - 最大值:2W 频率 - 跃迁:- 工作温度:150°C（TJ） 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商器件封装:TO-220NIS 标准包装:1 |
| 2SB14880PA | 功能描述:TRANS PNP 400VCEO 500MA MT-2 RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
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