- 您现在的位置：买卖IC网 > PDF目录49981 > 2SB1467Q (SANYO SEMICONDUCTOR CO LTD) 8 A, 30 V, PNP, Si, POWER TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SB1467Q |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 8 A, 30 V, PNP, Si, POWER TRANSISTOR |
| 封装： | TO-220ML, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 37K |
| 代理商： | 2SB1467Q |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
General High-Current Switching Applications
Ordering number:ENN3363
2SB1467/2SD2218
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42804TN (PC)/O2098HA (KT)/N120MH, JK (KOTO) No.3363–1/4
Package Dimensions
unit:mm
2041A
[2SB1467/2SD2218]
C
Electrical Characteristics at Ta = 25C
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
( ) : 2SB1467
Specifications
Absolute Maximum Ratings at Ta = 25C
* : The 2SB1467/2SD2218 are classified by 1A hFE as follows :
Continued on next page.
k
n
a
RQ
R
S
h E
F
0
4
1
o
t
0
70
0
2
o
t
0
10
8
2
o
t
0
4
1
Tc=25C
Applications
Relay drivers, high-speed inverters, converters.
Features
Micaless package facilitating mounting.
Low collector-to-emitter saturation voltage :
VCE(sat)=–0.5V (PNP), 0.4V (NPN) max.
Large current capacity.
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
C
s
g
n
i
t
a
R
t
i
n
U
n
i
mp
y
tx
a
m
t
n
e
r
u
C
f
o
t
u
C
r
o
t
c
e
ll
o
CI
O
B
C
V B
C
I
,
V
0
4
)
–
(
=
E 0
=1
.
0
)
–
(A
m
t
n
e
r
u
C
f
o
t
u
C
r
e
t
i
m
EI
O
B
E
V B
E
I
,
V
4
)
–
(
=
C 0
=1
.
0
)
–
(A
m
n
i
a
G
t
n
e
r
u
C
D
h E
F
*
1V E
C
I
,
V
2
)
–
(
=
C
A
1
)
–
(
=*
0
7*
0
8
2
h E
F 2V E
C
I
,
V
2
)
–
(
=
C
A
4
)
–
(
=0
3
t
c
u
d
o
r
P
h
t
d
i
w
d
n
a
B
-
n
i
a
GfT
V E
C
I
,
V
5
)
–
(
=
C
A
1
)
–
(
=0
2
1z
H
M
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
Cs
g
n
i
t
a
Rt
i
n
U
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
o
t
c
e
ll
o
CV
O
B
C
0
6
)
–
(V
e
g
a
t
l
o
V
r
e
t
i
m
E
-
o
t
-
r
o
t
c
e
ll
o
CV
O
E
C
0
3
)
–
(V
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
e
t
i
m
EV
O
B
E
6
)
–
(V
t
n
e
r
u
C
r
o
t
c
e
ll
o
CIC
8
)
–
(A
)
e
s
l
u
P
(
t
n
e
r
u
C
r
o
t
c
e
ll
o
CI P
C
5
1
)
–
(A
n
o
i
t
a
p
i
s
i
D
r
o
t
c
e
ll
o
CPC
2W
0
2W
e
r
u
t
a
r
e
p
m
e
T
n
o
i
t
c
n
u
Jj
T
0
5
1
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
Sg
t
s
T
0
5
1
+
o
t
5
–
1.6
1.2
0.75
14.0
16.0
10.0
18.1
5.6
3.2
7.2
3.5
2.55
2.4
4.5
2.8
0.7
2.55
2.4
1
23
相关PDF资料 |
PDF描述 |
|---|---|
| 2SB1467-Q | 8 A, 30 V, PNP, Si, POWER TRANSISTOR |
| 2SB1467-S | 8 A, 30 V, PNP, Si, POWER TRANSISTOR |
| 2SD2228-T2 | 500 mA, 16 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2228D44-T2-A | 500 mA, 16 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2228D43-T2-A | 500 mA, 16 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1472-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANS DARL PNP 60V 7A TO-220MF |
| 2SB1474TL | 功能描述:达林顿晶体管 DARL PNP 80V 4A RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2SB1481(Q) | 制造商:Toshiba 功能描述:PNP -100V -4A 2000 TO220NIS 制造商:Toshiba 功能描述:PNP -100V -4A 2000 TO220NIS Bulk 制造商:Toshiba America Electronic Components 功能描述:Semi, Bipolar, Transistor, PNP, Power, D |
| 2SB1481(TOJS,Q,M) | 功能描述:TRANS PNP 4A 100V TO220-3 制造商:toshiba semiconductor and storage 系列:- 包装:散装 零件状态:停產 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:4A 电压 - 集射极击穿（最大值）:100V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:1.5V @ 6mA，3A 电流 - 集电极截止（最大值）:2μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:2000 @ 3A，2V 功率 - 最大值:2W 频率 - 跃迁:- 工作温度:150°C（TJ） 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商器件封装:TO-220NIS 标准包装:1 |
| 2SB14880PA | 功能描述:TRANS PNP 400VCEO 500MA MT-2 RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
发布紧急采购，3分钟左右您将得到回复。