参数资料
型号: 2SB1558-A
元件分类: 功率晶体管
英文描述: 8 A, 140 V, PNP, Si, POWER TRANSISTOR
封装: LEAD FREE, 2-16C1A, 3 PIN
文件页数: 1/4页
文件大小: 190K
代理商: 2SB1558-A
2SB1558
2006-11-21
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor)
2SB1558
Power Amplifier Applications
High breakdown voltage: VCEO = 140 V (min)
Complementary to 2SD2387
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
140
V
Collector-emitter voltage
VCEO
140
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
8
A
Base current
IB
0.1
A
Collector power dissipation
(Tc = 25°C)
PC
80
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Unit: mm
JEDEC
JEITA
TOSHIBA
2-16C1A
Weight: 4.7 g (typ.)
BASE
EMITTER
≈ 100
COLLECTOR
相关PDF资料
PDF描述
2SB1558-B 8 A, 140 V, PNP, Si, POWER TRANSISTOR
2SB1560P 10 A, 150 V, PNP, Si, POWER TRANSISTOR
2SB1575 3000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1594-A 10 A, 160 V, PNP, Si, POWER TRANSISTOR
2SB1594-C 10 A, 160 V, PNP, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
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