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参数资料
| 型号： | 2SB1570Y |
| 厂商： | SANKEN ELECTRIC CO LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 12 A, 150 V, PNP, Si, POWER TRANSISTOR |
| 封装： | MT-200, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 29K |
| 代理商： | 2SB1570Y |
49
hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000)
I C– V CE Characteristics (Typical)
h FE– I C Characteristics (Typical)
h FE– I C Temperature Characteristics (Typical)
I C– V BE Temperature Characteristics (Typical)
V CE(sat) – I B Characteristics (Typical)
Pc – T a Derating
0
–2
–4
–6
–12
–10
–8
–2
–4
–6
Collector-Emitter Voltage V CE(V)
Collector
Current
I
C
(A)
–10mA
–2.0mA
–1.5mA
–1.0mA
–1.2mA
–0.8mA
–0.6mA
I B=–0.4mA
0
–3
–2
–1
–0.2
–1
–0.5
–10
–5
–200
–100
–50
Base Current I B(mA)
Collector-Emitter
Saturation
Voltage
V
CE(sat)
(V)
–7A
–10A
I C=–5A
0
–12
–10
–8
–6
–2
–4
0
–2.5
–2
–1
Base-Emittor Voltage V BE(V)
Collector
Current
I
C
(A)
(V CE=–4V)
125C
(Case
Temp)
25C
(Case
Temp)
–30C
(Case
Temp)
1,000
10,000
40,000
5,000
–0.2
–0.5
–1
–5
–10–12
Collector Current I C(A)
DC
Current
Gain
h
FE
(V CE=–4V)
Typ
(V CE=–4V)
–0.2
–1
–0.5
–5
–12
–10
800
1000
5000
10000
50000
Collector Current I C(A)
DC
Current
Gain
h
FE
125C
25C
–30C
1
5
10
50
100
500 1000
2000
Time t(ms)
0.1
1
2
0.5
Transient
Thermal
Resistance
θ
j-a
(C/W)
0.02
0.1
0.05
0.5
1
5
10
0
40
60
20
100
80
Cut-off
Frequency
f
T
(MH
Z
)
(V CE=–12V)
Emitter Current I E(A)
Typ
Without Heatsink
Natural Cooling
10ms
–10
–50
–5
–3
–100
–200
–0.05
–0.1
–1
–0.5
–10
–30
–5
Collector-Emitter Voltage V CE(V)
Collector
Current
I
C
(A)
DC
100ms
160
120
80
40
5
0
2 5
5 0
7 5
100
125
150
Ambient Temperature Ta(C)
Maximum
Power
Dissipation
P
C
(W)
With
Infinite
heatsink
Without Heatsink
Safe Operating Area (Single Pulse)
θj-a–t Characteristics
f T– I E Characteristics (Typical)
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2401)
Application : Audio, Series Regulator and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Ratings
–160
–150
–5
–12
–1
150(Tc=25°C)
150
–55 to +150
Unit
V
A
W
°C
sAbsolute maximum ratings
sElectrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
Ratings
–100max
–150min
5000min
–2.5max
–3.0max
50typ
230typ
Unit
A
V
MHz
pF
Conditions
VCB=–160V
VEB=–5V
IC=–30mA
VCE=–4V, IC=–7A
IC=–7A, IB=–7mA
VCE=–12V, IE=2A
VCB=–10V, f=1MHz
Darlington
2SB1570
(Ta=25°C)
sTypical Switching Characteristics (Common Emitter)
VCC
(V)
–70
RL
(
)
10
IC
(A)
–7
VBB2
(V)
5
IB2
(mA)
7
ton
(
s)
0.8typ
tstg
(
s)
3.0typ
tf
(
s)
1.2typ
IB1
(mA)
–7
VBB1
(V)
–10
External Dimensions MT-200
2
3
1.05
+0.2
-0.1
BE
5.45±0.1
2-3.2±0.1
36.4±0.3
9
24.4±0.2
7
21.4
±0.3
20.0min
4.0max
0.65
+0.2
-0.1
3.0
+0.3
-0.1
6.0±0.2
2.1
a
b
C
Weight : Approx 18.4g
a. Part No.
b. Lot No.
B
E
C
(70
)
Equivalent circuit
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| 2SB1572-T1-AZ HY | 制造商:Renesas Electronics 功能描述:PNP |
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