参数资料
型号: 2SB1604A
厂商: PANASONIC CORP
元件分类: 功率晶体管
英文描述: Silicon PNP epitaxial planar type(For low-voltage switching)
中文描述: 10 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-220AB
封装: TO-220E, FULL PACK-3
文件页数: 2/4页
文件大小: 173K
代理商: 2SB1604A
2
Power Transistors
2SB1604, 2SB1604A
PC —Ta
IC —VCE
VCE(sat) —IC
VBE(sat) —IC
hFE —IC
fT —IC
Cob —VCB
ton, tstg, tf — IC
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
50
40
30
20
10
(1) T
C=Ta
(2) With a 100
× 100 × 2mm
Al heat sink
(3) With a 50
× 50 × 2mm
Al heat sink
(4) Without heat sink
(P
C=2W)
(1)
(4)
(3)
(2)
Ambient temperature Ta (C)
Collector
power
dissipation
P
C
(W
)
0
–12
–10
–8
–2
–6
–4
0
–12
–10
–8
–6
–4
–2
T
C=25C
–80mA
–60mA
–50mA
–40mA
–35mA
–20mA
–15mA
–30mA
–25mA
–10mA
–5mA
I
B=–100mA
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
– 0.1
–1
–10
– 0.3
–3
– 0.01
–10
–1
– 0.1
– 0.03
– 0.3
–3
I
C/IB=30
T
C=–25C
25C
100C
Collector current I
C
(A)
Base
to
emitter
saturation
voltage
V
BE(sat)
(V
)
– 0.1
–1
–10
–100
– 0.3
–3
–30
1
3
10
30
100
300
1000
3000
10000
V
CE=–2V
T
C=100C
25C
–25C
Collector current I
C
(A)
Forward
current
transfer
ratio
h
FE
– 0.1
–1
–10
–100
– 0.3
–3
–30
1
3
10
30
100
300
1000
3000
10000
I
E=0
f=1MHz
T
C=25C
Collector to base voltage V
CB
(V)
Collector
output
capacitance
C
ob
(pF
)
0–8
–2
–6
–4
–7
–1
–5
–3
0.01
10
1
0.1
0.03
0.3
3
t
stg
t
on
t
f
Pulsed t
w=1ms
Duty cycle=1%
I
C/IB=30
(–I
B1=IB2)
V
CC=–20V
T
C=25C
Collector current I
C
(A)
Switching
time
t
on
,t
stg
,t
f
(
s
)
– 0.1
–1
–10
– 0.3
–3
– 0.01
–10
–1
– 0.1
– 0.03
– 0.3
–3
I
C/IB=30
T
C=100C
–25C
25C
Collector current I
C
(A)
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V
)
– 0.01
– 0.1
–1
–10
– 0.03
– 0.3
–3
1
3
10
30
100
300
1000
3000
10000
V
CE=–10V
f=10MHz
T
C=25C
Collector current I
C
(A)
Transition
frequency
f
T
(MHz
)
– 0.1
–1
–10
–100
– 0.3
–3
–30
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
CP
I
C
10ms
t=1ms
2SB1604A
2SB1604
Non repetitive pulse
T
C=25C
DC
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
相关PDF资料
PDF描述
2SB1605 Silicon PNP epitaxial planar type(For low-freauency power amplification)
2SB1606 Silicon PNP epitaxial planar type(For power switching)
2SB1607 Silicon PNP epitaxial planar type(For power switching)
2SB1623 Silicon PNP epitaxial planer type(For power amplification)
2SB1629 Silicon PNP epitaxial planar type(For power amplification)
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