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参数资料
| 型号： | 2SB1604A |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | Silicon PNP epitaxial planar type(For low-voltage switching) |
| 中文描述： | 10 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | TO-220E, FULL PACK-3 |
| 文件页数： | 4/4页 |
| 文件大小： | 173K |
| 代理商： | 2SB1604A |
Data Sheet D15078EJ1V0DS
2
2SK3480
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 100 V, VGS = 0 V10
A
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
A
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 25 A17
34
S
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 25 A25
31
m
RDS(on)2
VGS = 4.5 V, ID = 25 A27
36
m
Input Capacitance
Ciss
VDS = 10 V
3600
pF
Output Capacitance
Coss
VGS = 0 V
360
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
190
pF
Turn-on Delay Time
td(on)
VDD = 50 V, ID = 25 A15
ns
Rise Time
tr
VGS = 10 V11
ns
Turn-off Delay Time
td(off)
RG = 0
68
ns
Fall Time
tf
6.0
ns
Total Gate Charge
QG
VDD = 80 V74
nC
Gate to Source Charge
QGS
VGS = 10 V10
nC
Gate to Drain Charge
QGD
ID = 50 A20
nC
Body Diode Forward Voltage
VF(S-D)
IF = 50 A, VGS = 0 V1.0
V
Reverse Recovery Time
trr
IF = 50 A, VGS = 0 V70
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
s
180
nC
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
→ 0 V
PG.
RG = 25
50
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle
≤ 1%
τ
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
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