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参数资料
| 型号： | 2SB1612 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Silicon PNP epitaxial planer type(For low-frequency amplification) |
| 中文描述： | 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SC-62, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 166K |
| 代理商： | 2SB1612 |
1
Transistor
2SB1612
Silicon PNP epitaxial planer type
For low-frequency amplification
Complementary to 2SD2474
s Features
q
Low collector to emitter saturation voltage VCE(sat).
q
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s Absolute Maximum Ratings (Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
EIAJ SC–62
3:Emitter
Mini Power Type Package
4.5
±0.1
2.6
±0.1
2.5
±0.1
0.4max.
1.0
+0.1
–0.2
4.0
+0.25
–0.20
3.0
±0.15
1.5
±0.1
0.4
±0.08
0.5
±0.08
1.5
±0.1
0.4
±0.04
1.6
±0.2
45
°
marking
321
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
*
Tj
Tstg
Ratings
–10
–7
–2.4
–2
1
150
–55 ~ +150
Unit
V
A
W
C
s Electrical Characteristics (Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
VCBO
VCEO
VEBO
hFE
VCE(sat)
fT
Cob
Conditions
VCB = –7V, IE = 0
IC = –10A, IE = 0
IC = –1mA, IB = 0
IE = –10A, IC = 0
VCE = –2V, IC = 200mA
IC = –1A, IB = –10mA
VCB = –6V, IE = 50mA, f = 200MHz
VCB = –6V, IE = 0, f = 1MHz
min
–10
–7
200
typ
– 0.19
60
100
max
–1
800
– 0.25
Unit
A
V
MHz
pF
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Marking symbol :
2F
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
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