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参数资料
| 型号： | 2SB1612 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Silicon PNP epitaxial planer type(For low-frequency amplification) |
| 中文描述： | 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SC-62, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 166K |
| 代理商： | 2SB1612 |
2
Transistor
2SB1612
0
160
40
120
80
140
20
100
60
0
1.4
1.2
0.4
1.0
0.8
0.2
0.6
Printed circut board: Copper
foil area of 1cm2 or more, and
the board thickness of 1.7mm
for the collector portion.
Ambient temperature Ta (C)
Collector
power
dissipation
P
C
(W
)
0
–2.4
–2.0
–1.6
– 0.4
–1.2
– 0.8
0
–1.2
–1.0
– 0.8
– 0.6
– 0.4
– 0.2
Ta=25C
–2.5mA
–2.0mA
–1.5mA
–1.0mA
– 0.5mA
I
B=–3.0mA
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
0
–1.2
–1.0
– 0.8
– 0.2
– 0.6
– 0.4
0
–3.0
–2.5
–2.0
–1.5
–1.0
– 0.5
V
CE=–2V
Ta=75C
–25C
25C
Base to emitter voltage V
BE
(V)
Collector
current
I
C
(A
)
– 0.01
– 0.1
–1
–10
– 0.03
– 0.3
–3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
C/IB=100
Ta=75C
25C
–25C
Collector current I
C
(A)
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V
)
– 0.01
– 0.1
–1
–10
– 0.03
– 0.3
–3
0
600
500
400
300
200
100
V
CE=–2V
Ta=75C
25C
–25C
Collector current I
C
(A)
Forward
current
transfer
ratio
h
FE
1
3
10
30
100
0
240
200
160
120
80
40
V
CB=–6V
f=200MHz
Ta=25C
Emitter current I
E
(mA)
Transition
frequency
f
T
(MHz
)
–1
–3
–10
–30
–100
0
240
200
160
120
80
40
I
E=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector
output
capacitance
C
ob
(pF
)
PC — Ta
IC — VCE
IC — VBE
VCE(sat) — IC
hFE — IC
fT — IE
Cob — VCB
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
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