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参数资料
| 型号： | 2SB1629P |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封装： | TO-220E, FULL PACK-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 173K |
| 代理商： | 2SB1629P |
2
Power Transistors
2SB1629
PC —Ta
IC —VCE
IC —VBE
VCE(sat) —IC
hFE —IC
fT —IC
Cob —VCB
ton, tstg, tf — IC
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
60
50
40
30
20
10
(1) T
C=Ta
(2) With a 100
× 100 × 2mm
Al heat sink
(3) With a 50
× 50 × 2mm
Al heat sink
(4) Without heat sink
(P
C=2W)
(1)
(2)
(3)
(4)
Ambient temperature Ta (C)
Collector
power
dissipation
P
C
(W
)
0
–12
–10
–8
–2
–6
–4
0
–6
–5
–4
–3
–2
–1
T
C=25C
–80mA
–60mA
–40mA
–20mA
–10mA
–5mA
–2mA
I
B=–100mA
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
– 0.01
– 0.1
–1
–10
– 0.03
– 0.3
–3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
C/IB=40
T
C=100C
–25C
25C
Collector current I
C
(A)
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V
)
– 0.01
– 0.1
–1
–10
– 0.03
– 0.3
–3
10
10000
1000
100
30
300
3000
V
CE=–4V
T
C=100C
25C
–25C
Collector current I
C
(A)
Forward
current
transfer
ratio
h
FE
–1
–3
–10
–30
–100
1
1000
100
10
3
30
300
I
E=0
f=1MHz
T
C=25C
Collector to base voltage V
CB
(V)
Collector
output
capacitance
C
ob
(pF
)
0–8
–2
–6
–4
0.01
0.03
0.1
0.3
1
3
10
30
100
t
stg
t
on
t
f
Pulsed t
w=1ms
Duty cycle=1%
I
C/IB=40
(–I
B1=IB2)
V
CC=–50V
T
C=25C
Collector current I
C
(A)
Switching
time
t
on
,t
stg
,t
f
(
s
)
02.0
1.6
0.4
1.2
0.8
0
6
5
4
3
2
1
V
CE=–4V
25C
–25C
T
C=125C
Base to emitter voltage V
BE
(V)
Collector
current
I
C
(A
)
– 0.01
– 0.1
–1
–10
– 0.03
– 0.3
–3
1
1000
100
10
3
30
300
V
CE=–12V
f=10MHz
T
C=25C
Collector current I
C
(A)
Transition
frequency
f
T
(MHz
)
–1
–10
–100
–1000
–3
–30
–300
0.01
10
1
0.1
0.03
0.3
3
Non
repetitive
pulse
T
C=25C
I
CP
I
C
t=10ms
1ms
DC
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
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