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参数资料
| 型号： | 2SB1631P |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封装： | MT-4-A1, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 213K |
| 代理商： | 2SB1631P |
2SB1631
2
SJD00087BED
PC Ta
IC VCE
IC VBE
VCE(sat) IC
hFE IC
fT IE
Cob VCB
ton , tstg , tf IC
Safe operation area
0
Collector
power
dissipation
P
C
(W)
Ambient temperature T
a (°C)
0
160
40
120
80
10
30
20
40
(1)TC=Ta
(2)Without heat sink
(PC=2.0W)
(1)
(2)
0
12
2
10
4
8
6
5
4
3
2
1
Collector
current
I
C
(A)
Collector-emitter voltage V
CE (V)
TC=25C
80mA
60mA
40mA
20mA
10mA
5mA
2mA
IB=100mA
0
2.0
1.6
1.2
0.8
0.4
6
5
4
3
2
1
Base-emitter voltage V
BE (V)
Collector
current
I
C
(A)
VCE=–4V
25C
–25C
TC=125C
Collector-emitter
saturation
voltage
V
CE(sat)
(V)
Collector current I
C (A)
0.01
0.1
1
10
100
0.1
1
10
IC/IB=40
TC=100C
–25C
25C
10
0.01
0.1
1
10
102
103
104
Forward
current
transfer
ratio
h
FE
Collector current I
C (A)
VCE=–4V
TC=100C
25C
–25C
0.01
0.1
1
10
1
1 000
100
10
Collector current I
C (A)
Transition
frequency
f
T
(MHz)
VCE=–12V
f=10MHz
TC=25C
1
10
100
1
1 000
100
10
Collector
output
capacitance
(Common
base,
input
open
circuited)
C
ob
(pF)
Collector-base voltage V
CB (V)
IE=0
f=1MHz
TC=25C
0
8
2
6
4
0.01
0.1
1
10
100
tstg
ton
tf
Pulsed tw=1ms
Duty cycle=1%
IC/IB=40
(–IB1=IB2)
VCC=–50V
TC=25C
Turn-on
time
t
on
,
Storage
time
t
stg
,
Fall
time
t
f
(
s)
Collector current I
C (A)
0.01
1
0.1
1
10
100
10
100
1000
Collector
current
I
C
(A)
Collector-emitter voltage V
CE (V)
ICP
IC
t=10ms
t=1ms
Non repetitive pulse
TC=25C
DC
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| 2SB1640 | 3 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 2SB1642 | 4 A, 60 V, PNP, Si, POWER TRANSISTOR |
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