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参数资料
| 型号： | 2SB548R |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 800 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/4页 |
| 文件大小： | 134K |
| 代理商： | 2SB548R |
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1998
Document No. D16141EJ2V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SB548, 549/2SD414, 415
PNP/NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS
DATA SHEET
2002
FEATURES
Ideal for audio amplifier drivers with 30 W to 50 W output
High voltage
Available for small mount spaces due to small and thin package
Easy to be attached to radiators
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
2SB548/
2SD414
2SB549/
2SD415
Unit
Collector to base voltage
VCBO
100/120
V
Collector to emitter voltage
VCEO
80/80
100/100
V
Emitter to base voltage
VEBO
5.0/5.0
V
Collector current
IC(DC)
0.8/0.8
A
Collector current
IC(pulse)*
1.5/1.5
A
Total power dissipation
PT (Ta = 25
°C)
1.0
W
Total power dissipation
PT (Tc = 25
°C)
10
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
*PW
≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB =
80/80 V, IE = 0
1.0/1.0
A
Emitter cutoff current
IEBO
VEB =
3.0/3.0 V, IC = 0
1.0/1.0
A
DC current gain
hFE1
VCE =
5.0/5.0 V, IC = 2.0/2.0 mA*
20
DC current gain
hFE2
VCE =
5.0/5.0 V, IC = 200/200 mA*
40
90
320
Collector saturation voltage
VCE(sat)
IC =
500/500 mA, IB = 50/50 mA*
0.4/0.3
2.0/2.0
V
Base saturation voltage
VBE(sat)
IC =
500/500 mA, IB = 50/50 mA*
0.9/0.9
1.5/1.5
V
Gain bandwidth product
fT
VCE =
5.0/5.0 V, IC = 100/100 mA
70/45
MHz
Collector capacitance
Cob
VCB =
10/10 V, IE = 0, f = 1.0 MHz
25/15
pF
*
Pulse test PW
≤ 350
s, duty cycle ≤ 2%
hFE2 CLASSIFICATION
Marking
S
R
Q
P
hFE2
40 to 80
60 to 120
100 to 200
160 to 320
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD414P-AZ | 800 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SB548 | 800 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SD415Q-AZ | 800 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD415Q | 800 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD414R | 800 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB549 | 制造商:NEC 制造商全称:NEC 功能描述:PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
| 2SB549Q | 制造商:NEC Electronics Corporation 功能描述:Bipolar Junction Transistor, PNP Type, TO-126VAR |
| 2SB550 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
| 2SB551 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:isc Silicon PNP Power Transistors |
| 2SB552 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 180V V(BR)CEO | 15A I(C) | TO-3 |
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