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参数资料
| 型号： | 2SB548R |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 800 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 2/4页 |
| 文件大小： | 134K |
| 代理商： | 2SB548R |
Data Sheet D16141EJ2V0DS
2
2SB548, 549/2SD414, 415
TYPICAL CHARACTERISTICS (Ta = 25
°°°°C)
Note
T
o
ta
lP
o
w
e
r
Di
s
ipa
ti
on
P
T
(W)
Temperature T (
°C)
Note
1.
Tc = 25
°C
2.
Derate the dissipation limited
area by case temperature and
duty cycle.
3.
S/b limited area is a single
pulse. Derate this area by
Collector to Emitter Voltage VCE (V)
Case Temperature Tc (
°C)
Derat
ing
dT
(
%
)
T
rans
ient
T
h
e
rm
a
lR
e
si
st
an
c
e
R
th
(°
C/
W)
Collector to Emitter Voltage VCE (V)
Pulse Width PW (ms)
Collector to Emitter Voltage VCE (V)
1.
Tc = 25
°C
2.
Derate the dissipation limited
area by case temperature and
duty cycle.
3.
S/b limited area is a single
pulse. Derate this area by case
temperature.
Col
le
c
tor
Current
IC
(A
)
Col
le
c
tor
Current
IC
(A
)
Col
le
c
tor
Current
IC
(A
)
Note
1. 1 mm aluminum board
for heatsink
2. No insulating board
3. Silicon grease coating
4. Horizontal level
With infinite heatsink
Without te heatsink
Note
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| 2SD414P-AZ | 800 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SB548 | 800 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SD415Q-AZ | 800 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD415Q | 800 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD414R | 800 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB549 | 制造商:NEC 制造商全称:NEC 功能描述:PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
| 2SB549Q | 制造商:NEC Electronics Corporation 功能描述:Bipolar Junction Transistor, PNP Type, TO-126VAR |
| 2SB550 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
| 2SB551 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:isc Silicon PNP Power Transistors |
| 2SB552 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 180V V(BR)CEO | 15A I(C) | TO-3 |
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