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参数资料
| 型号： | 2SB621R |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | ROHS COMPLIANT, SC-43A, TO-92-B1, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 159K |
| 代理商： | 2SB621R |
2SD1252, 2SD1252A
2
SJD00169BED
■ Electrical Characteristics T
C = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SD1252
VCEO
IC
= 30 mA, I
B
= 0
60
V
(Base open)
2SD1252A
80
Base-emitter voltage
VBE
VCE = 4 V, IC = 3 A
1.8
V
Collector-emitter cutoff
2SD1252
ICES
VCE =
60 V, V
BE = 0
200
A
current (E-B short)
2SD1252A
VCE = 80 V, VBE = 0
200
Collector-emitter cutoff
2SD1252
ICEO
VCE = 30 V, IB = 0
300
A
current (Base open)
2SD1252A
VCE =
40 V, I
B = 0
300
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 0
1
mA
Forward current transfer ratio
hFE1 *
VCE = 4 V, IC = 1 A
40
250
hFE2
VCE
= 4 V, I
C
= 3 A10
Collector-emitter saturation voltage
VCE(sat)
IC = 3 A, IB = 0.375 A
1.2
V
Transition frequency
2SD1252
fT
VCE = 5 V, IC = 0.5 A, f = 10 MHz
30
MHz
2SD1252A
25
Turn-on time
ton
IC
= 1 A
0.5
s
Strage time
tstg
IB1 = 0.1 A, IB2 = 0.1 A
2.5
s
Fall time
tf
VCC = 50 V
0.4
s
Rank
R
Q
P
hFE1
40 to 90
70 to 150
120 to 250
This product complies with the RoHS Directive (EU 2002/95/EC).
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