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参数资料
| 型号： | 2SB621R |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | ROHS COMPLIANT, SC-43A, TO-92-B1, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 159K |
| 代理商： | 2SB621R |
2SD1252, 2SD1252A
3
SJD00169BED
VCE(sat) IC
hFE IC
fT IC
PC Ta
IC VCE
IC VBE
0
160
40
120
80
0
10
20
30
40
50
Collector
power
dissipation
P
C
(W
)
Ambient temperature T
a (°C)
(1)TC=Ta
(2)With a 50
×50×2mm
Al heat sink
(3)Without heat sink
(PC=1.3W)
(1)
(2)
(3)
024
420
816
12
0
1.2
1.0
0.8
0.6
0.4
0.2
Collector
current
I
C
(A
)
Collector-emitter voltage V
CE (V)
IB=7mA
6mA
5mA
4mA
3mA
2mA
1mA
TC=25C
0
2.4
0.4
2.0
0.8
1.6
1.2
0
8
6
4
2
Base-emitter voltage V
BE (V)
Collector
current
I
C
(A
)
TC=100C
25C
–25C
VCE=4V
0.01
0.1
1
0.01
10
1
0.1
Collector-emitter
saturation
voltage
V
CE(sat)
(V
)
Collector current I
C (A)
IC/IB=10
TC=100C
25C
–25C
0.01
0.1
1
10
1
10
Forward
current
transfer
ratio
h
FE
Collector current I
C (A)
102
104
103
VCE=4V
TC=100C
25C
–25C
0.01
0.1
1
10
1
10
Transition
frequency
f
T
(MHz
)
Collector current I
C (A)
102
104
103
VCE=5V
f=10MHz
TC=25C
0.01
1
0.1
1
10
100
10
100
1000
Collector
current
I
C
(A
)
Collector-emitter voltage V
CE (V)
ICP
IC
t=10ms
t=300ms
t=1ms
2SD1252
2SD1252A
Non repetitive pulse
TC=25C
Safe operation area
Rth t
102
101
1
10
103
102
103
104
102
10
1
101
103
102
104
Time t (s)
Thermal
resistance
R
th
(°
C/W)
(1)
(2)
(1)Without heat sink
(2)With a 50
×50×2mm Al heat sink
This product complies with the RoHS Directive (EU 2002/95/EC).
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB621S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 1A I(C) | TO-92 |
| 2SB624 | 制造商:Distributed By MCM 功能描述:SUB ONLY NEC TRANSISTOR SC-59-30V .7A .2W SURFACE MOUNT |
| 2SB624_0712 | 制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:Silicon Epitaxial Planar Transistor |
| 2SB624BV1 | 制造商:NEC 制造商全称:NEC 功能描述:BJT |
| 2SB624BV2 | 制造商:NEC 制造商全称:NEC 功能描述:BJT |
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