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参数资料
| 型号： | 2SB647A-C |
| 元件分类： | 小信号晶体管 |
| 英文描述： | SMALL SIGNAL TRANSISTOR |
| 文件页数： | 3/6页 |
| 文件大小： | 31K |
| 代理商： | 2SB647A-C |
2SB647, 2SB647A
3
Maximum Collector Dissipation
Curve
1.2
0.8
0.4
0
50
150
100
Ambient Tmperature Ta (
°C)
Collector
power
dissipation
P
C
(W)
Typical Output Characteristics
–1.0
–0.8
–0.6
–0.4
–0.2
0
–2
–10
–6
–4
–8
IB = 0
–0.5mA
–2
–1
–5
–10
–20
–30
–40
–60
–80
–100
–120
Collector
current
I
C
(A)
Collector to Emitter Voltage VCE (V)
P
C
= 0.9
W
Typical Transfer Characteristics
–500
–200
–100
–50
–20
–10
–5
–2
–1
0
–0.2
–0.4
–0.6
–0.8
–1.0
VCE = –5 V
Pulse
Ta
=
75
°C
25
–25
Base to Emitter Voltage VBE (V)
Collector
current
I
C
(mA)
DC Current Transfer Ratio
vs. Collector Current
VCE = –5 V
Pulse
Ta = 75°C
600
500
400
300
200
100
0
–1
–3
–30
–300
–10
Collector Current IC (mA)
DC
current
transfer
ratio
h
FE
–100
–1,000
25
–25
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PDF描述 |
|---|---|
| 2SB647A | SMALL SIGNAL TRANSISTOR |
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| 2SB688O | 10 A, 120 V, PNP, Si, POWER TRANSISTOR |
| 2SB688LO | 10 A, 120 V, PNP, Si, POWER TRANSISTOR |
| 2SB736AB54 | 300 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB647ACTZ-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SB647B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-92VAR |
| 2SB647C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-92VAR |
| 2SＢ647－C | 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT PNP 80V 1A 3-Pin TO-92 Mod |
| 2SB647CTZ-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
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