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参数资料
| 型号： | 2SB647A-C |
| 元件分类： | 小信号晶体管 |
| 英文描述： | SMALL SIGNAL TRANSISTOR |
| 文件页数： | 4/6页 |
| 文件大小： | 31K |
| 代理商： | 2SB647A-C |
2SB647, 2SB647A
4
Saturation Voltage
vs. Collector Current
Collector Current IC (mA)
Base
to
emitter
saturation
voltage
V
BE(sat)
(V)
IC = 10 IB
Pulse
Ta = –25
°C
75
25
–25
Ta = 75
°C
VCE(sat)
VBE(sat)
–1.2
–1.0
–0.8
–0.6
–0.4
–0.2
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V)
–0.6
–0.5
–0.4
–0.3
–0.2
–0.1
0
–1
–3
–10
–30
–100 –300 –1,000
Gain Bandwidth Product
vs. Collector Current
VCE = –5 V
240
200
160
120
80
40
0
–10
–30
–100
–300
–1,000
Collector Current IC (mA)
Gain
bandwidth
product
f
T
(MHz)
Collector Output Capacitance vs.
Collector to Base Voltage
–1
200
100
50
20
10
5
2
–2
–5
–10
Collector to Base Voltage VCB (V)
Collector
output
capacitance
C
ob
(pF)
–50
–20
–100
f = 1 MHz
IE = 0
相关PDF资料 |
PDF描述 |
|---|---|
| 2SB647A | SMALL SIGNAL TRANSISTOR |
| 2SB647D | SMALL SIGNAL TRANSISTOR |
| 2SB688O | 10 A, 120 V, PNP, Si, POWER TRANSISTOR |
| 2SB688LO | 10 A, 120 V, PNP, Si, POWER TRANSISTOR |
| 2SB736AB54 | 300 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB647ACTZ-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SB647B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-92VAR |
| 2SB647C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-92VAR |
| 2SＢ647－C | 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT PNP 80V 1A 3-Pin TO-92 Mod |
| 2SB647CTZ-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
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