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参数资料
| 型号： | 2SB649 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1500 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | TO-126MOD, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 32K |
| 代理商： | 2SB649 |
2SB649, 2SB649A
3
Electrical Characteristics (Ta = 25°C)
2SB649
2SB649A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–180 —
—
–180 —
—
V
I
C = –1 mA, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–120 —
—
–160 —
—
V
I
C = –10 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
–5
—
–5
—
V
I
E = –1 mA, IC = 0
Collector cutoff current
I
CBO
—
–10
—
–10
AV
CB = –160 V, IE = 0
DC current transfer ratio h
FE1*
1
60
—
320
60
—
200
V
CE = –5 V,
I
C = –150 mA
h
FE2
30
—
30
—
V
CE = –5 V,
I
C = –500 mA*
2
Collector to emitter
saturation voltage
V
CE(sat)
——–1——–1V
I
C = –500 mA,
I
B = –50 mA
Base to emitter voltage
V
BE
—
–1.5
—
–1.5
V
CE = –5 V,
I
C = –150 mA
Gain bandwidth product f
T
—
140
—
140
—
MHz
V
CE = –5 V,
I
C = –150 mA
Collector output
capacitance
Cob
—
27
—
27
—
pF
V
CB = –10 V, IE = 0,
f = 1 MHz
Notes: 1. The 2SB649 and 2SB649A are grouped by h
FE1 as follows.
2. Pulse test
BC
D
2SB649
60 to 120
100 to 200
160 to 320
2SB649A
60 to 120
100 to 200
—
相关PDF资料 |
PDF描述 |
|---|---|
| 2SB649D | 1500 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB649AC | 1500 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB649C | 1500 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB649AC | 1500 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB688R | 8 A, 120 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB649_09 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SB649_11 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SB649A | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:PNP Epitaxial Planar Transistors |
| 2SB649AB | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-126 |
| 2SB649A-B-AB3-B | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
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