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参数资料
| 型号： | 2SB649 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1500 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | TO-126MOD, 3 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 32K |
| 代理商： | 2SB649 |
2SB649, 2SB649A
5
DC Current Transfer Ratio
vs. Collector Current
350
VCE = –5V
Ta = 75°C
25°C
–25°C
350
250
200
150
DC
current
transfer
ratio
h
FE
100
50
0
–1
–10
–100
–1,000
Collector current IC (mA)
Collector to Emitter Saturation
Voltage vs. Collector Current
IC = 10 IB
–1.2
–1.0
–0.8
–0.6
–0.4
–0.2
–0
–1
–10
Collector current IC (mA)
–100
–25
25
–1,000
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V)
Ta
=
75
°C
Collector current IC (mA)
IC = 10 IB
–1.2
–1.0
–0.8
–0.6
–0.4
–0.2
–0
–1
–10
–100
–1,000
Base
to
emitter
saturation
voltage
V
BE(sat)
(V)
Base to Emitter Saturation Voltage
vs. Collector Current
Ta =
–25°
C
25
75
VCE = –5 V
Gain Bandwidth Product
vs. Collector Current
240
200
160
120
80
40
0
–10
–30
Gain
bandwidth
product
f
T
(MHz)
–100
–300
–1,000
Collector current IC (mA)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SB649D | 1500 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB649AC | 1500 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB649C | 1500 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB649AC | 1500 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB688R | 8 A, 120 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB649_09 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SB649_11 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SB649A | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:PNP Epitaxial Planar Transistors |
| 2SB649AB | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-126 |
| 2SB649A-B-AB3-B | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
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