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参数资料
| 型号： | 2SB710S |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封装： | ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 151K |
| 代理商： | 2SB710S |
2SA0838
2
SJC00005BED
hFE IC
Cob VCB
Cre VCE
PC Ta
IC VCE
VCE(sat) IC
fT IE
GP IC
NF
I
E
0
200
160
40
120
80
0
500
400
300
200
100
Collector
power
dissipation
P
C
(mW
)
Ambient temperature T
a (°C)
0
10
8
2
6
4
0
30
25
20
15
10
5
Ta
= 25°C
IB
= 250 A
200 A
150 A
100 A
50 A
Collector
current
I
C
(mA
)
Collector-emitter voltage V
CE (V)
0.1
1
10
100
0.01
0.1
1
10
100
IC / IB
= 10
Ta
= 75°C
25
°C
25°C
Collector-emitter
saturation
voltage
V
CE(sat)
(V
)
Collector current I
C (mA)
0.1
1
10
100
0
120
100
80
60
40
20
VCE
= 10 V
Ta
= 75°C
25
°C
25°C
Forward
current
transfer
ratio
h
FE
Collector current I
C (mA)
0.1
1
10
100
0
6
5
4
3
2
1
f
= 1 MHz
IE
= 0
Ta
= 25°C
Collector-base voltage V
CB (V)
Collector
output
capacitance
(Common
base,
input
open
circuited)
C
ob
(pF)
1
10
100
0
5
4
3
2
1
IC
= 1 mA
f
= 10.7 MHz
Ta
= 25°C
Collector-emitter voltage V
CE (V)
Common-emitter
reverse
transfer
capacitance
C
re
(pF
)
0.1
1
10
100
0
600
500
400
300
200
100
VCB
= 10 V
Ta
= 25°C
Transition
frequency
f
T
(MHz
)
Emitter current I
E (mA)
0.1
1
10
100
0
24
20
16
12
8
4
VCE
= 10 V
f
= 100 MHz
Ta
= 25°C
Power
gain
G
P
(dB
)
Collector current I
C (mA)
0.1
1
10
0
5
4
3
2
1
VCB
= 10 V
f
= 100 MHz
Ta
= 25°C
Noise
figure
NF
(dB
)
Emitter current I
E (mA)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB712 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTORTO-220-100V -6A 50W BCE |
| 2SB713 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:SILICON EPITAXAL BASE MESA TRANSISTOR |
| 2SB715 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTORTO-92MOD -100V -.05A .75W ECB |
| 2SB715D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 50MA I(C) | TO-92VAR |
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