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参数资料
| 型号： | 2SB740C |
| 元件分类： | 小信号晶体管 |
| 英文描述： | SMALL SIGNAL TRANSISTOR |
| 封装： | TO-92MOD, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 28K |
| 代理商： | 2SB740C |
2SB740
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
–70
V
Collector to emitter voltage
V
CEO
–50
V
Emitter to base voltage
V
EBO
–6
V
Collector current
I
C
–1
A
Collector power dissipation
P
C
0.9
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–70
—
V
I
C = –10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–50
—
V
I
C = –1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–6
——V
I
E = –10 A, IC = 0
Collector cutoff current
I
CBO
——
–1
AV
CB = –55 V, IE = 0
Emitter cutoff current
I
EBO
—
–0.2
AV
EB = –6 V, IC = 0
DC current transfer ratio
h
FE*
1
100
—
320
V
CE = –2 V, IC = –0.1 A
Collector to emitter saturation
voltage
V
CE(sat)
—
–0.6
V
I
C = –1 A, IB = –0.1 A
Gain bandwidth product
f
T
—
150
—
MHz
V
CE = –2 V, IC = –10 mA
Collector output capacitance
Cob
—
35
—
pF
V
CB = –10 V, IE = 0,
f = 1 MHz
Note:
1. The 2SB740 is grouped by h
FE as follows.
BC
100 to 200
160 to 320
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB740CTZ-E | 制造商:Rochester Electronics LLC 功能描述: 制造商:RNS 功能描述: |
| 2SB742 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-126 -20V -2A 10W ECBC |
| 2SB743 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
| 2SB744 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR 制造商:NEC Electronics Corporation 功能描述:Bipolar Junction Transistor, PNP Type, TO-126 |
| 2SB744A | 制造商:JMNIC 制造商全称:Quanzhou Jinmei Electronic Co.,Ltd. 功能描述:Silicon PNP Power Transistors |
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